BTD7520J3 Transistor Datasheet

BTD7520J3 Datasheet, PDF, Equivalent


Part Number

BTD7520J3

Description

High Voltage NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD7520J3 Datasheet


BTD7520J3
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTD7520J3
Spec. No. : C614J3
Issued Date : 2008.07.11
Revised Date :
Page No. : 1/6
Features
High BVCEO
Very high current gain
Pb-free package
Symbol
BTD7520J3
Outline
TO-252
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw380μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
BTD7520J3
Limits
150
150
6
10
20 (Note 1)
1.75 (Note 2)
20
71.4 (Note 2)
3.125
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTD7520J3
CYStech Electronics Corp.
Spec. No. : C614J3
Issued Date : 2008.07.11
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
Cob
Min.
150
150
6
-
-
-
-
800
200
-
Typ.
-
-
-
-
-
-
-
-
-
130
Max.
-
-
-
10
10
2.5
1.2
-
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IC=100μA, IC=0
μA VCB=150V, IE=0
μA VEB=6V, IC=0
V IC=5A, IB=50mA
V IC=5A, IB=10mA
- VCE=5V, IC=1A
- VCE=5V, IC=5A
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD7520J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
D7520
BTD7520J3
CYStek Product Specification


Features CYStech Electronics Corp. High Voltage N PN Epitaxial Planar Transistor BTD7520J 3 Spec. No. : C614J3 Issued Date : 200 8.07.11 Revised Date : Page No. : 1/6 Features • High BVCEO • Very high c urrent gain • Pb-free package Symbol BTD7520J3 Outline TO-252 B:Base C :Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collect or-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Curre nt (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal R esistance, Junction to Ambient Thermal Resistance, Junction to Case Junction T emperature Storage Temperature VCBO VC EO VEBO IC ICP PD PD RθJA RθJC Tj Tst g Note : 1. Single Pulse , Pw≦380μs ,Duty≦2%. 2. When mounted on a PCB wi th the minimum pad size. BTD7520J3 Li mits 150 150 6 10 20 (Note 1) 1.75 (Not e 2) 20 71.4 (Note 2) 3.125 150 -55~+15 0 Unit V V V A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C614J3 Issued Date : 2.
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