BTD7520J3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD7520J3 Spec. No. : C614J3 Issued Date : 2008.07.11 Revised Date : Page No. : 1/6 Features High BVCEO Very high current gain Pb-free package Symbol BTD7520J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTD7520J3 Limits 150 150 6 10 20 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 3.125 150 -55~+150 Unit V V V A W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C614J3 Issued Date : 2008.07.11 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE Cob Min. 150 150 6 800 200 - Typ. 130 Max. 10 10 2.5 1.2 - Unit Test Conditions V IC=1mA, IE=0 V IC=10mA, IB=0 V IC=100μA, IC=0 μA VCB=150V, IE=0 μA VEB=6V, IC=0 V IC=5A, IB=50mA V IC=5A, IB=10mA - VCE=5V, IC=1A - VCE=5V, IC=5A pF VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTD7520J3 Package TO-252 (Pb-free) S...