BTD7521E3 Transistor Datasheet

BTD7521E3 Datasheet, PDF, Equivalent


Part Number

BTD7521E3

Description

High Voltage NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 5 Pages
Datasheet
Download BTD7521E3 Datasheet


BTD7521E3
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTD7521E3
BVCEO
IC
RCE(SAT)
Features
High BVCEO
Very high current gain
Pb-free lead plating package
Spec. No. : C615E3
Issued Date : 2011.03.10
Revised Date : 2017.06.29
Page No. : 1/5
90V
10A
50mΩ(max)
Symbol
BTD7521E3
Outline
TO-220
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD7521E3-0-UB-X
Package
TO-220
(Pb-free lead plating)
Shipping
50 pcs / tube, 20 tubes/ box , 4 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
BTD7521E3
CYStek Product Specification

BTD7521E3
CYStech Electronics Corp.
Spec. No. : C615E3
Issued Date : 2011.03.10
Revised Date : 2017.06.29
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw300μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
90
90
9
10
20 (Note)
2
80
62.5
1.56
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
Cob
Min.
90
90
9
-
-
-
-
-
-
-
1000
600
300
-
Typ.
-
-
-
-
-
135
27
190
470
0.74
-
-
-
130
Max.
-
-
-
10
100
250
50
300
650
0.9
-
-
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IC=100μA, IC=0
μA VCB=90V, IE=0
nA VEB=7V, IC=0
mV IC=5A, IB=50mA
mΩ IC=5A, IB=50mA
mV IC=5A, IB=30mA
mV IC=5A, IB=20mA
V IC=6A, IB=10mA
- VCE=5V, IC=1A
- VCE=5V, IC=5A
- VCE=5V, IC=10A
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTD7521E3
CYStek Product Specification


Features CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD752 1E3 BVCEO IC RCE(SAT) Features • High BVCEO • Very high current gain Pb-free lead plating package Spec. No. : C615E3 Issued Date : 2011.03.10 R evised Date : 2017.06.29 Page No. : 1/5 90V 10A 50mΩ(max) Symbol BTD7521E3 Outline TO-220 B:Base C:Collector E:Emitter BCE Ordering Information Device BTD7521E3-0-UB-X Package TO-22 0 (Pb-free lead plating) Shipping 50 p cs / tube, 20 tubes/ box , 4 boxes/cart on Environment friendly grade : S for RoHS compliant products, G for RoHS com pliant and green compound products Pack ing spec, UB : 50 pcs / tube, 20 tubes/ box Product rank, zero for no rank prod ucts Product name BTD7521E3 CYStek Pr oduct Specification CYStech Electronic s Corp. Spec. No. : C615E3 Issued Date : 2011.03.10 Revised Date : 2017.06.29 Page No. : 2/5 Absolute Maximum Ratin gs (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC.
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