BTD7521J3 Transistor Datasheet

BTD7521J3 Datasheet, PDF, Equivalent


Part Number

BTD7521J3

Description

High Voltage NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 9 Pages
Datasheet
Download BTD7521J3 Datasheet


BTD7521J3
CYStech Electronics Corp.
Spec. No. : C615J3
Issued Date : 2009.05.08
Revised Date : 2016.07.06
Page No. : 1/9
High Voltage NPN Epitaxial Planar Transistor
BTD7521J3
BVDSS
ID
RCE(SAT)
90V
10A
0.1Ω
Features
High BVCEO
Very high current gain
Pb-free lead plating package
Symbol
BTD7521J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Ordering Information
Device
BTD7521J3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTD7521J3
CYStek Product Specification

BTD7521J3
CYStech Electronics Corp.
Spec. No. : C615J3
Issued Date : 2009.05.08
Revised Date : 2016.07.06
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Note : 1. Single Pulse , Pw300μs,Duty2%.
2. When mounted on a PCB with the minimum pad size.
Limits
90
90
7
10
20 (Note 1)
1.75 (Note 2)
30
71.4 (Note 2)
4.2
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE
*hFE
Cob
Min.
90
90
7
-
-
-
-
-
1000
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
130
Max.
-
-
-
10
10
0.5
0.1
1.2
-
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IC=100μA, IC=0
μA VCB=90V, IE=0
μA VEB=7V, IC=0
V IC=5A, IB=50mA
Ω IC=5A, IB=50mA
V IC=5A, IB=50mA
- VCE=5V, IC=1A
- VCE=5V, IC=5A
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD7521J3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 615J3 Issued Date : 2009.05.08 Revised Date : 2016.07.06 Page No. : 1/9 High Voltage NPN Epitaxial Planar Transistor BTD7521J3 BVDSS ID RCE(SAT) 90V 10A 0.1Ω Features • High BVCEO • Very high current gain • Pb-free lead pla ting package Symbol BTD7521J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTD7521J3-0-T3-G Package TO-2 52 (RoHS compliant and halogen-free pac kage) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoH S compliant products, G for RoHS compli ant and green compound products Packin g spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank pr oducts Product name BTD7521J3 CYStek Product Specification CYStech Electro nics Corp. Spec. No. : C615J3 Issued D ate : 2009.05.08 Revised Date : 2016.07 .06 Page No. : 2/9 Absolute Maximum Ra tings (Ta=25°C) Parameter Symbol Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C.
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