BTD882NUT3 Transistor Datasheet

BTD882NUT3 Datasheet, PDF, Equivalent


Part Number

BTD882NUT3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD882NUT3 Datasheet


BTD882NUT3
CYStech Electronics Corp.
BTD882NUT3Low Vcesat NPN Epitaxial Planar Transistor
BVCEO
IC
Spec. No. : C630T3
Issued Date : 2017.03.22
Revised Date : 2017.04.18
Page No. : 1/6
30V
3A
Features
Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB772NUT3
Pb-free lead plating and halogen-free package
Symbol
BTD882NUT3
Outline
TO-126
BBase
CCollector
EEmitter
ECB
Ordering Information
Device
BTD882NUT3-X-BL-X
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box ,
30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD882NUT3
CYStek Product Specification

BTD882NUT3
CYStech Electronics Corp.
Spec. No. : C630T3
Issued Date : 2017.03.22
Revised Date : 2017.04.18
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Power Dissipation
Ta=25
Tc=25
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw350μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj ; Tstg
Limit
40
30
9
3
7 *1
1
10
-55~+150
Unit
V
V
V
A
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
125
12.5
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
40
30
9
-
-
-
-
100
160
-
-
Typ.
-
-
-
-
-
0.2
1
-
-
90
17
Max.
-
-
-
100
100
0.5
1.5
-
320
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=40V, IE=0
VEB=6V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification Of hFE 2
Rank
P
Range
160~320
BTD882NUT3
CYStek Product Specification


Features CYStech Electronics Corp. BTD882NUT3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C630T3 Issued D ate : 2017.03.22 Revised Date : 2017.04 .18 Page No. : 1/6 30V 3A Features • Low VCE(sat), 0.2V typ. at IC / IB = 2 A / 0.2A • Excellent current gain cha racteristics • Complementary to BTB77 2NUT3 • Pb-free lead plating and halo gen-free package Symbol BTD882NUT3 Out line TO-126 B:Base C:Collector E Emitter ECB Ordering Information Dev ice BTD882NUT3-X-BL-X Package TO-126 ( Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ cts Packing spec, BL: bulk, 200 pcs/bag , 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD882NUT3 CYStek Product Speci fication CYStech Electronics Corp. Sp ec. No. : C630T3 Issued Date : 2017.03. 22 Revised Date : 2017.04.18 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°.
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