CYStech Electronics Corp.
BTD882NUT3Low Vcesat NPN Epitaxial Planar Transistor
BVCEO IC
Spec. No. : C630T3 Issued Dat...
CYStech Electronics Corp.
BTD882NUT3Low Vcesat
NPN Epitaxial Planar
Transistor
BVCEO IC
Spec. No. : C630T3 Issued Date : 2017.03.22 Revised Date : 2017.04.18 Page No. : 1/6
30V 3A
Features
Low VCE(sat), 0.2V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772NUT3 Pb-free lead plating and halogen-free package
Symbol
BTD882NUT3
Outline
TO-126
B：Base C：Collector E：Emitter
ECB
Ordering Information
Device BTD882NUT3-X-BL-X
Package
TO-126 (Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD882NUT3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C630T3 Issued Date : 2017.03.22 Revised Date : 2017.04.18 Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Power Dissipation
Ta=25℃ Tc=25℃
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol VCBO VCEO VEBO IC
PD
Tj ; Tstg
Limit
40 30 9 3 7 *1 1 10 -55~+150
Unit
V V V A A
W
°C
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max
Symbol
RθJA RθJC
Limit
125 12.5
Unit °C/...
