6N65-HC

UNISONIC TECHNOLOGIES CO., LTD 6N65-HC 6A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65-HC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 3.0 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 6N65L-TA3-T 6N65G-TA3-T 6N65L-TF1-T 6N65G-TF1-T 6N65L-TF3-T 6N65G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-378.A 6N65-HC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ID ±30 6 V A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 24 A 68 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.8 V/ns Power Dissipation TO-220 TO-220F/TO-220F1 PD 125 W 40 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximu...