4N65-S MOSFET Datasheet

4N65-S Datasheet, PDF, Equivalent


Part Number

4N65-S

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 6 Pages
Datasheet
Download 4N65-S Datasheet


4N65-S
UNISONIC TECHNOLOGIES CO., LTD
4N65-S
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65-S is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.9@ VGS = 10V, ID = 2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
4N65L-TN3-T
4N65G-TN3-T
TO-252
- 4N65G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12345678
GDS - - - - -
GDS - - - - -
S S SGDDD D
Packing
Tube
Tape Reel
Tape Reel
MARKING
TO-220F1 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
1 of 6
QW-R502-A21.C

4N65-S
4N65-S
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
Pulsed (Note2)
ID
IDM
4.0
16
A
A
Avalanche Energy
Single Pulsed (Note3)
EAS
150 mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5 V/ns
TO-220F1
36 W
Power Dissipation
TO-252
DFN-8(5×6)
PD
50 W
30 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°С
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 18.75mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD4A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
TO-220F1
62.5
Junction to Ambient
TO-252
θJA
110
DFN-8(5×6)
75 (Note)
TO-220F1
3.47
Junction to Case
TO-252
θJC
2.5
DFN-8(5×6)
4.17 (Note)
Note: Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A21.C


Features UNISONIC TECHNOLOGIES CO., LTD 4N65-S 4A , 650V N-CHANNEL POWER MOSFET  DESCR IPTION The UTC 4N65-S is a high voltage power MOSFET designed to have better c haracteristics, such as fast switching time, low gate charge, low on-state res istance and have a high rugged avalanch e characteristic. This power MOSFET is usually used in high speed switching ap plications including power supplies, PW M motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.9Ω @ VGS = 10V , ID = 2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  S YMBOL Power MOSFET  ORDERING INFOR MATION Ordering Number Lead Free Hal ogen Free Package 4N65L-TF1-T 4N65G- TF1-T TO-220F1 4N65L-TN3-T 4N65G-TN3 -T TO-252 - 4N65G-K08-5060-R DFN-8(5 6) Note: Pin Assignment: G: Gate D: D rain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - S S SGDDD D P acking Tube Tape Reel Tape Reel  MARKING TO-220F1 / TO-252 www.unisonic..
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