24NM70 MOSFET Datasheet

24NM70 Datasheet, PDF, Equivalent


Part Number

24NM70

Description

N-CHANNEL SUPER-JUNCTION MOSFET

Manufacture

UTC

Total Page 7 Pages
Datasheet
Download 24NM70 Datasheet


24NM70
UNISONIC TECHNOLOGIES CO., LTD
24NM70
24A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 24NM70 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a
high rugged avalanche characteristics. This power MOSFET is
usually used at AC-DC converters for power applications.
FEATURES
* RDS(ON) 0.19@ VGS=10V, ID=12A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
24NM70L-TF1-T
24NM70G-TF1-T
24NM70L-TF2-T
24NM70G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-164.D

24NM70
24NM70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 700 V
VGSS ±30 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
24 A
96 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR
EAS
5.2 A
879 mJ
Peak Diode Recovery dv/dt
dv/dt
6.3 V/ns
Power Dissipation
PD 32 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L =65mH, IAS = 5.2A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 24A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
0.98
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=700V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
700
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=12A
2.5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=560V, VGS=10V, ID=24A
IG= 1mA (Note1, 2)
VDS=100V, VGS=10V, ID=24A,
RG=25(Note1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=24A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=24A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
TYP MAX UNIT
10
+100
-100
V
µA
nA
nA
4.5 V
0.18 0.19
2000
1280
110
pF
pF
pF
70 nC
9.6 nC
27.2 nC
26 ns
32 ns
240 ns
110 ns
24
96
1.4
520
10.5
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-164.D


Features UNISONIC TECHNOLOGIES CO., LTD 24NM70 24 A, 700V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 24NM70 is a Su per Junction MOSFET Structure and is de signed to have better characteristics, such as fast switching time, low gate c harge, low on-state resistance and a hi gh rugged avalanche characteristics. Th is power MOSFET is usually used at AC-D C converters for power applications. FEATURES * RDS(ON) ≤ 0.19Ω @ VGS= 10V, ID=12A * High Switching Speed * 10 0% Avalanche Tested  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  OR DERING INFORMATION Ordering Number Le ad Free Halogen Free 24NM70L-TF1-T 2 4NM70G-TF1-T 24NM70L-TF2-T 24NM70G-TF 2-T Note: Pin Assignment: G: Gate D: D rain S: Source Package TO-220F1 TO-220 F2 Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.unisonic.co m.tw Copyright © 2019 Unisonic Technol ogies Co., Ltd 1 of 7 QW-R205-164.D 2 4NM70 Power MOSFET  ABSOLUTE MAXIM UM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UN.
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