4NM60-U2 MOSFET Datasheet

4NM60-U2 Datasheet, PDF, Equivalent


Part Number

4NM60-U2

Description

N-CHANNEL SUPER-JUNCTION MOSFET

Manufacture

UTC

Total Page 8 Pages
Datasheet
Download 4NM60-U2 Datasheet


4NM60-U2
UNISONIC TECHNOLOGIES CO., LTD
4NM60-U2
4A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM60-U2 is a Super Junction MOSFET Structure
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies,
PWM motor controls, high efficient AC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) 1.8@ VGS=10V, ID=2.0A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM60L-TF1-T
4NM60G-TF1-T
4NM60L-TM3-T
4NM60G-TM3-T
4NM60L-TN3-R
4NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-277.E

4NM60-U2
4NM60-U2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
Drain Current
Avalanche Current (Note 2)
Continuous
Pulsed (Note 2)
VGSS
ID
IDM
IAR
±30
4
8
2.4
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
28.8 mJ
4.3 V/ns
Power Dissipation
TO-220F1
TO-251/TO-252
PD
24 W
46 W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=2.4A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD4.0A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
Junction to Ambient
TO-220F1
TO-251/TO-252
θJA
62.5
110
Junction to Case
TO-220F1
TO-251/TO-252
θJC
5.2
2.71 (Note)
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R205-277.E


Features UNISONIC TECHNOLOGIES CO., LTD 4NM60-U2 4A, 600V N-CHANNEL SUPER-JUNCTION MOSFE T  DESCRIPTION The UTC 4NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristic s, such as fast switching time, low gat e charge, low on-state resistance and h igh rugged avalanche characteristics. T his power MOSFET is usually used in hig h speed switching applications at power supplies, PWM motor controls, high eff icient AC to DC converters and bridge c ircuits.  FEATURES * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Improved dv/dt Capability , High Ruggedness  SYMBOL Power MOS FET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM60 L-TF1-T 4NM60G-TF1-T 4NM60L-TM3-T 4N M60G-TM3-T 4NM60L-TN3-R 4NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-251 TO- 252 Pin Assignment 123 GDS GDS GDS Pa cking Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 8 Q.
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