4NM60-U2

UNISONIC TECHNOLOGIES CO., LTD 4NM60-U2 4A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.8Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM60L-TF1-T 4NM60G-TF1-T 4NM60L-TM3-T 4NM60G-TM3-T 4NM60L-TN3-R 4NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-277.E 4NM60-U2 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Drain Current Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±30 4 8 2.4 V A A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 28.8 mJ 4.3 V/ns Power Dissipation TO-220F1 TO-251/TO-252 PD 24 W 46 W Junction Temperature TJ +150...