9N65-TC MOSFET Datasheet

9N65-TC Datasheet, PDF, Equivalent


Part Number

9N65-TC

Description

N-CHANNEL POWER MOSFET

Manufacture

UTC

Total Page 8 Pages
Datasheet
Download 9N65-TC Datasheet


9N65-TC
UNISONIC TECHNOLOGIES CO., LTD
9N65-TC
9A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N65-TC is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.1@ VGS=10 V, ID=4.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
Package
9N65L-TA3-T
9N65G-TA3-T
TO-220
9N65L-TF1-T
9N65G-TF1-T
TO-220F1
9N65L-TF3-T
9N65G-TF3-T
TO-220F
Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-510.A

9N65-TC
9N65-TC
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Continuous Drain Current
VGSS ±30 V
ID 9 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IDM
EAS
18 A
250 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.22 V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
PD
150 W
35 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10mH, IAS = 7.07A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 9.0A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
0.83
3.57
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R205-510.A


Features UNISONIC TECHNOLOGIES CO., LTD 9N65-TC 9 A, 650V N-CHANNEL POWER MOSFET  DESC RIPTION The UTC 9N65-TC is a high volta ge power MOSFET designed to have better characteristics, such as fast switchin g time, low gate charge, low on-state r esistance and high rugged avalanche cha racteristics. This power MOSFET is usua lly used in high speed switching applic ations of switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.1 @ VGS=10 V, ID=4.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high rugged ness  SYMBOL Power MOSFET  ORDE RING INFORMATION Note: Ordering Numbe r Lead Free Halogen Free Package 9N 65L-TA3-T 9N65G-TA3-T TO-220 9N65L-T F1-T 9N65G-TF1-T TO-220F1 9N65L-TF3- T 9N65G-TF3-T TO-220F Pin Assignment : G: Gate C: Collector E: Emitter Pin Assignment 123 GDS GDS GDS Packing Tub e Tube Tube  MARKING www.unisonic.c om.tw Copyright © 2018 Unisonic Techno logies Co., Ltd 1 of 8 QW-R205-510.A 9N65-TC Power MOSFET  ABSOLUTE MAX.
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