9N65-TC

UNISONIC TECHNOLOGIES CO., LTD 9N65-TC 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.1Ω @ VGS=10 V, ID=4.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free Package 9N65L-TA3-T 9N65G-TA3-T TO-220 9N65L-TF1-T 9N65G-TF1-T TO-220F1 9N65L-TF3-T 9N65G-TF3-T TO-220F Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-510.A 9N65-TC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ±30 V ID 9 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 18 A 250 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.22 V/ns Power Dissipation TO-220 TO-220F/TO-220F1 PD 150 W 35 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximu...