2SD1624 Transistor Datasheet

2SD1624 Datasheet, PDF, Equivalent


Part Number

2SD1624

Description

Bipolar Transistor

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download 2SD1624 Datasheet


2SD1624
Ordering number : EN2019B
2SB1124/2SD1624
Bipolar Transistor
(–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of FBET, MBIT processes
Fast switching speed
Specications ( ): 2SB1124
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Low collector-to-emitter saturation voltage
Large current capacity and wide ASO
Conditions
Ratings
(--)60
(--)50
(--)6
(--)3
(--)6
Unit
V
V
V
A
A
Continued on next page.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1
0.4
2
0.5
1.5
3.0
3
2SB1124S-TD-E
2SB1124S-TD-H
1.5 2SB1124T-TD-E
2SB1124T-TD-H
2SD1624S-TD-E
2SD1624S-TD-H
2SD1624T-TD-E
2SD1624T-TD-H
0.4
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
TD
Marking
RANK
RANK
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
PCP
2SB1124
2SD1624
Electrical Connection
22
11
3
2SB1124
3
2SD1624
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019-1/7

2SD1624
2SB1124 / 2SD1624
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
500
1.5
150
--55 to +150
Unit
mW
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)3A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)100mA
VCE=(--)2A, IC=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
Ratings
min typ
100*
35
(--)60
(--)50
(--)6
150
(39)25
(--0.35)0.19
(--)0.94
(70)70
(450)650
(35)35
max
(--)1
(--)1
560*
(--0.7)0.5
(--)1.2
Unit
μA
μA
MHz
pF
V
V
V
V
V
ns
ns
ns
* ; The 2SB1124/2SD1624 are classied by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
U
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
IB1
RB
IB2
OUTPUT
25Ω
50Ω
++
100μF
470μF
--5V 25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Device
2SB1124S-TD-E
2SB1124S-TD-H
2SB1124T-TD-E
2SB1124T-TD-H
2SD1624S-TD-E
2SD1624S-TD-H
2SD1624T-TD-E
2SD1624T-TD-H
Package
PCP
PCP
PCP
PCP
PCP
PCP
PCP
PCP
Shipping
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
No.2019-2/7


Features Ordering number : EN2019B 2SB1124/2SD16 24 Bipolar Transistor (–)50V, (–)3A , Low VCE(sat), (PNP)NPN Single PCP ht tp://onsemi.com Applications • Volt age regulators, relay drivers, lamp dri vers, electrical equipment Features Adoption of FBET, MBIT processes • Fast switching speed Specifications ( ): 2SB1124 Absolute Maximum Ratings a t Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage E mitter-to-Base Voltage Collector Curren t Collector Current (Pulse) Symbol VCB O VCEO VEBO IC ICP • Low collector-t o-emitter saturation voltage • Large current capacity and wide ASO Conditio ns Ratings (--)60 (--)50 (--)6 (--)3 (--)6 Unit V V V A A Continued on nex t page. Package Dimensions unit : mm ( typ) 7007B-004 Top View 4.5 1.6 1 0.4 2 0.5 1.5 3.0 3 1.0 2.5 4.0 BG LO T No. DG LOT No. 2SB1124S-TD-E 2SB1124 S-TD-H 1.5 2SB1124T-TD-E 2SB1124T-TD-H 2SD1624S-TD-E 2SD1624S-TD-H 2SD1624T-TD -E 2SD1624T-TD-H 0.4 Product & Package Information • Package : PCP • JEITA, .
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