Silicon Diode
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an RU4Z.
2. Outline
Type
Silicon Diode
...
Description
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an RU4Z.
2. Outline
Type
Silicon Diode
Structure
Resin Molded
Applications
High Frequency Rectification
3. Flammability UL94V-0(Equivalent)
RU4Z
Not Recommended for New Designs
061110
1/5
61426-01
Not Recommended for New Designs
SANKEN ELECTRIC CO., LTD. 4. Absolute maximum ratings No. Item 1 Transient Peak Reverse Voltage 2 Peak Reverse Voltage 3 Average Forward Current 4 Peak Surge Forward Current 5 I2t Limiting Value 6 Junction Temperature 7 Storage Temperature
Symbol Unit
VRSM VRM IF(AV) IFSM I2t
V V A A A2s
Tj °C Tstg °C
Rating 250 200 3.5 70 24.5
-40~+150 -40~+150
RU4Z
Conditions
Refer to Derating of 7 10msec. Half sinewave, one shot 1msec≤t≤10msec
5. Electrical characteristics (Ta=25°C ,unless otherwise specified)
No.
Item
Symbol Unit
Value
1 Forward Voltage Drop
VF
2 Reverse Leakage Current
IR
3
Reverse Leakage Current Under High Temperature
H・IR
4
Reverse Leakage Current Under High Temperature
trr-1 trr-2
V uA
uA ns ns
1.3 max. 10 max.
300 max. 400 max. 180 max.
5 Thermal Resistance
Rth(j-l) °C /W
8 max.
Conditions
IF=3.5A
VR=VRM
VR=VRM, Tj=100°C IF=IRP=10mA 90% Recovery point, Tj=25°C IF=10mA,IRP=20mA 75% Recovery point ,Tj=25°C Between Junction and Lead
061110
2/5
61426-01
PFsigns(W)
Forward Power Dissipation (W)
SANKEN ELECTRIC CO., LTD. 6. Characteristics
5.0 Tj=150°C
IF(AV) - PF
4.0
t T
3.0
t/T=1/6 t/T=1/3,sinewave
2.0 t/T=1/2
1.0
D...
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