RU4B Diode Datasheet

RU4B Datasheet, PDF, Equivalent


Part Number

RU4B

Description

Fast Recovery Diode

Manufacture

Sanken

Total Page 5 Pages
Datasheet
Download RU4B Datasheet


RU4B
VRM = 800 V, IF(AV) = 1.5 A, trr = 400 ns
Fast Recovery Diode
RU4B
Data Sheet
Description
The RU4B is a high voltage fast recovery diode of
800 V / 1.5 A. The maximum trr of 400 ns is realized by
optimizing a life-time control.
Features
VRM------------------------------------------------------ 800 V
IF(AV)------------------------------------------------------ 1.5 A
VF--------------------------------------------------------1.60 V
trr1-------------------------------------------------------- 400 ns
Bare Leads: Pb-free (RoHS Compliant)
Package
Axial (φ6.5 × 8.0L / φ1.4)
Cathode Mark
(1)
(2)
Applications
High Voltage Rectification Circuit
(PFC Circuit, Bridge Circuit, etc.)
Snubber Diode
(Flyback Converter, etc.)
(1) (2) (1) Cathode
(2) Anode
Not to scale
RU4B-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 13, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
1

RU4B
RU4B
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Peak Repetitive Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
Surge Forward Current
I2t Limiting Value
Junction Temperature
Storage Temperature
Symbol
VRSM
VRM
IF(AV)
IFSM
I2t
TJ
TSTG
Rating
850
800
1.5
50
12.5
40 to 150
40 to 150
Unit Conditions
V
V
A
TA = 60 °C;
See Figure 2 and Figure 3.
Half cycle sine wave,
A positive side, 10 ms,
1 shot
A2s 1 ms t 10 ms
°C
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
Reverse Recovery Time
VF
IR
HIR
trr1
trr2
Thermal Resistance (1)
Rth(J-L)
Conditions
TJ = 25 °C, IF = 3.0 A
TJ = 100 °C, IF = 3.0 A
VR = VRM
VR = VRM, TJ = 100 °C
IF = IRP = 10 mA
90% recovery point,
TJ = 25 °C
IF = 10 mA,
IRP = 20 mA,
75% recovery point,
TJ = 25 °C
See Figure 1.
Min. Typ. Max. Unit
— — 1.60 V
0.96
V
— — 10 µA
— — 500 µA
— — 400 ns
— — 180 ns
— — 8.0 °C/W
TL 15 mm
Device
1.6 mm
Diameter of soldering area: φ5 mm
Cupper thickness: 50 µm
Figure 1 Lead Temperature Measurement Conditions
(1) Rth (J-L) is thermal resistance between junction and lead.
RU4B-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Nov. 13, 2017
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
2


Features VRM = 800 V, IF(AV) = 1.5 A, trr = 400 n s Fast Recovery Diode RU4B Data Sheet Description The RU4B is a high voltage fast recovery diode of 800 V / 1.5 A. The maximum trr of 400 ns is realized b y optimizing a life-time control. Featu res ● VRM---------------------------- -------------------------- 800 V ● IF (AV)----------------------------------- ------------------- 1.5 A ● VF------- --------------------------------------- ----------1.60 V ● trr1-------------- --------------------------------------- --- 400 ns ● Bare Leads: Pb-free (RoH S Compliant) Package Axial (φ6.5 × 8 .0L / φ1.4) Cathode Mark (1) (2) App lications ● High Voltage Rectificatio n Circuit (PFC Circuit, Bridge Circuit, etc.) ● Snubber Diode (Flyback Conve rter, etc.) (1) (2) (1) Cathode (2) An ode Not to scale Not Recommended for N ew Designs RU4B-DSE Rev.1.0 SANKEN EL CTRIC CO., LTD. Nov. 13, 2017 http:// www.sanken-ele.co.jp/en © SANKEN ELEC TRIC CO., LTD. 2017 1 Not Recommended for New Designs RU4B Absolute Maximum Ra.
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