SiHA30N60AEL MOSFET Datasheet

SiHA30N60AEL Datasheet, PDF, Equivalent


Part Number

SiHA30N60AEL

Description

Power MOSFET

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download SiHA30N60AEL Datasheet


SiHA30N60AEL
www.vishay.com
SiHA30N60AEL
Vishay Siliconix
EL Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) typ. () at 25 °C
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
120
14
19
Single
0.105
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Thin-lead TO-220 FULLPAK
SiHA30N60AEL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) e
Pulsed drain current a
Linear derating factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single pulse avalanche energy b
Maximum power dissipation
Operating junction and storage temperature range
Reverse diode dv/dt d
EAS
PD
TJ, Tstg
dv/dt
Soldering recommendations (peak temperature) c
For 10 s
Mounting torque
M3 screw
Notes
• Initial samples marked as SiHA30N60BE
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A
c. 1.6 mm from case
d. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C
e. Limited by maximum junction temperature
LIMIT
600
± 30
28
18
68
0.3
353
39
-55 to +150
32
260
0.6
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Nm
S18-0173-Rev. A, 12-Feb-18
1
Document Number: 92069
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHA30N60AEL
www.vishay.com
SiHA30N60AEL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-case (drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.2
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
VDS temperature coefficient
Gate-source threshold Voltage (N)
VDS
VDS/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 15 A
VDS = 20 V, ID = 15 A
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related a
Effective output capacitance, time
related b
Ciss
Coss
Crss
Co(er)
Co(tr)
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate input resistance
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
ID = 15 A, VDS = 480 V
VDD = 480 V, ID = 15 A,
VGS = 10 V, Rg = 9.1
f = 1 MHz, open drain
Continuous source-drain diode current
Pulsed diode forward current
IS
MOSFET symbol
showing the
D
integral reverse
G
ISM p - n junction diode
S
MIN. TYP. MAX. UNIT
600 -
-V
- 0.68 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - ± 1 μA
- -1
μA
- - 10
- 0.105 0.120
- 19 - S
- 2565 -
- 109 -
- 6-
- 71 -
- 367 -
- 60 120
- 14 -
- 19 -
- 26 52
- 24 48
- 79 158
- 33 66
0.35 0.72 1.45
pF
nC
ns
- - 26
A
- - 68
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 15 A, VGS = 0 V
TJ = 25 °C, IF = IS = 15 A,
di/dt = 100 A/μs, VR = 400 V
--
- 335
- 5.4
- 30
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS
1.2
670
10.8
-
V
ns
μC
A
S18-0173-Rev. A, 12-Feb-18
2
Document Number: 92069
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHA30N60AEL Vishay Sili conix EL Series Power MOSFET Thin-Lea d TO-220 FULLPAK D G G DS S N-Chann el MOSFET PRODUCT SUMMARY VDS (V) at T J max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configurati on 650 VGS = 10 V 120 14 19 Single 0. 105 FEATURES • Low figure-of-merit ( FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and condu ction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Material categorization: for definit ions of compliance please see www.visha y.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power fa ctor correction power supplies (PFC) Lighting - High-intensity discharge ( HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heati ng - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb )-free and halogen-free Thin-lead TO-220 FULLPAK SiHA30N60AEL-GE3 ABSOLUTE MAXIMUM RAT.
Keywords SiHA30N60AEL, datasheet, pdf, Vishay, Power, MOSFET, iHA30N60AEL, HA30N60AEL, A30N60AEL, SiHA30N60AE, SiHA30N60A, SiHA30N60, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)