SiHP30N60E MOSFET Datasheet

SiHP30N60E Datasheet, PDF, Equivalent


Part Number

SiHP30N60E

Description

Power MOSFET

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download SiHP30N60E Datasheet


SiHP30N60E
www.vishay.com
SiHP30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
130
15
39
Single
0.125
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of
Available
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- LED lighting
• Industrial
- Welding
- Induction heating
- Motor drives
• Battery chargers
• Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-220AB
SiHP30N60E-E3
SiHP30N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
VDS = 0 V to 80 % VDS
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
600
± 30
29
18
65
2
690
250
-55 to +150
70
18
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
S15-0277- Rev. G, 23-Feb-15
1
Document Number: 91456
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiHP30N60E
www.vishay.com
SiHP30N60E
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related b
Effective Output Capacitance, Time
Related c
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 600 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 15 A
VDS = 8 V, ID = 3 A
VGS = 0 V,
VDS = 100 V,
f = 1.0 MHz
VDS = 0 V to 480 V, VGS = 0 V
VGS = 10 V
ID = 15 A, VDS = 480 V
VDD = 380 V, ID = 15 A,
VGS = 10 V, Rg = 4.7 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN.
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.64
2.8
-
-
-
-
0.104
5.4
-
-
4.0
± 100
±1
1
100
0.125
-
V
V/°C
V
nA
μA
μA
Ω
S
2600
138
3
98
-
-
-
-
346
85
15
39
19
32
63
36
0.63
-
130
-
-
40
65
95
75
-
pF
nC
ns
Ω
- 29
A
- 65
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 15 A, VGS = 0 V
- - 1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 15 A,
dI/dt = 100 A/μs, VR = 20 V
- 402 605 ns
- 7 15 μC
- 32 65 A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S15-0277- Rev. G, 23-Feb-15
2
Document Number: 91456
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiHP30N60E Vishay Silico nix E Series Power MOSFET PRODUCT SUM MARY VDS (V) at TJ max. RDS(on) max. a t 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 130 15 39 Single 0.125 D TO-220AB G S D G S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduc ed switching and conduction losses • Ultra low gate charge (Qg) • Avalanc he energy rated (UIS) • Material cate gorization: for definitions of Availab le compliance please see www.vishay.co m/doc?99912 APPLICATIONS • Server an d telecom power supplies • Switch mod e power supplies (SMPS) • Power facto r correction power supplies (PFC) • L ighting - High-intensity discharge (HID ) - Fluorescent ballast lighting - LED lighting • Industrial - Welding - Ind uction heating - Motor drives • Batte ry chargers • Renewable energy - Sola r (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-220AB SiHP30N60E-E3 SiHP30N60E-G.
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