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SiHP30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
130 15 39 Single
0.125
D
TO-220AB
G
S D G
S N-Channel MOSFET
FEATURES
Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and...
