VS-80EBU04HF4 Diode Datasheet

VS-80EBU04HF4 Datasheet, PDF, Equivalent


Part Number

VS-80EBU04HF4

Description

Ultrafast Soft Recovery Diode

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-80EBU04HF4 Datasheet


VS-80EBU04HF4
www.vishay.com
VS-80EBU04HF4
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A FRED Pt®
PowerTab®
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
PowerTab®
80 A
400 V
0.92 V
See recovery table
175 °C
Single die
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF(AV)
Single pulse forward current
IFSM
Maximum repetitive forward current
Operating junction and
storage temperatures
IFRM
TJ, TStg
TEST CONDITIONS
TC = 122 °C
TC = 25 °C
Square wave, 20 kHz
MAX.
400
80
800
160
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
Vr
IR = 100 μA
IF = 80 A
Forward voltage
VF IF = 80 A, TJ = 175 °C
IF = 80 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
400
-
-
-
-
-
-
TYP.
-
1.1
0.92
0.98
-
-
50
3.5
MAX. UNITS
-
1.3
1.08
1.15
50
2
-
-
V
μA
mA
pF
nH
Revision: 16-Jun-15
1 Document Number: 93997
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-80EBU04HF4
www.vishay.com
VS-80EBU04HF4
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 80 A
VR = 200 V
dIF/dt = 200 A/μs
TJ = 125 °C
- 50
- 87
- 151
- 9.3
- 17.2
- 405
- 1300
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to heatsink
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.5
0.2 -
- 5.02
0.18
-
2.4
- (20)
80EBU04H
UNITS
°C/W
g
oz.
N·m
(lbf · in)
Revision: 16-Jun-15
2 Document Number: 93997
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-80EBU04HF4 Vishay Sem iconductors Ultrafast Soft Recovery Di ode, 80 A FRED Pt® PowerTab® Cathod e Anode PRODUCT SUMMARY Package IF(AV ) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 80 A 400 V 0.92 V See recovery table 175 °C Single die FEATURES • Ultrafast recovery time 175 °C max. operating junction temp erature • Screw mounting only • AEC -Q101 qualified • PowerTab® package • Material categorization: for def initions of compliance please see www.v ishay.com/doc?99912 BENEFITS • Reduce d RFI and EMI • Higher frequency oper ation • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS Th ese diodes are optimized to reduce loss es and EMI/RFI in high frequency power conditioning systems. The softness o f the recovery eliminates the need for a snubber in most applications. These d evices are ideally suited for HF weldin g, power converters and other applicati ons where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMU.
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