BU406D Transistor Datasheet

BU406D Datasheet, PDF, Equivalent


Part Number

BU406D

Description

Silicon NPN Transistor

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download BU406D Datasheet


BU406D
BU406D
Silicon NPN Transistor
Power Amp, High Voltage, Switch
TO220 Type Package
Description:
The BU406D is a silicon NPN transistor in a TO220 type package designed for highvoltage, high
speed horizontal deflection output stages of TVs and CTVs.
Features:
D CollectorEmitter Sustaining Voltage: VCEV = 330V (Min)
D Low saturation Voltage: VCE(sat) = 1V (Max) @ C = 5A
D Fast Switching Speed: tf = 0.75s (Max)
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
CollectorEmitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current,
Continuous
IC. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total
PDowerearteDiAsbsiopvaetio2n5(CTC.
=
..
+25C),
.......
.P.D.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . . . 60W
480mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.085C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEV
IEBO
IC = 100mA, IB = 0, Note 1
VCE = 400V, VBE = 1.5V
VEB = 6V, IC = 0
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
200 − − V
− − 15 mA
− − 400 mA

BU406D
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Diode Forward Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VF
IC = 2A, VCE = 5V
IC = 5A, IB = 650mA
IC = 5A, IB = 650mA
IF = 5A
15
− − 1.0 V
− − 1.3 V
− − 1.5 V
Current GainBandwidth Product
Switching Characteristics
fT IC = 500mA, VCE = 10V, f = 1MHz 10
MHz
Fall Time
tf VCC = 40V, IC = 5A,
IB end = 650mA
− − 0.75 s
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab


Features BU406D Silicon NPN Transistor Power Amp, High Voltage, Switch TO−220 Type Pac kage Description: The BU406D is a sili con NPN transistor in a TO−220 type p ackage designed for high−voltage, hig h− speed horizontal deflection output stages of TVs and CTVs. Features: D C ollector−Emitter Sustaining Voltage: VCEV = 330V (Min) D Low saturation Volt age: VCE(sat) = 1V (Max) @ C = 5A D Fas t Switching Speed: tf = 0.75s (Max) Absolute Maximum Ratings: Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter V oltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emi tter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Keywords BU406D, datasheet, pdf, NTE, Silicon, NPN, Transistor, U406D, 406D, 06D, BU406, BU40, BU4, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)