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BU406D Dataheets PDF



Part Number BU406D
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet BU406D DatasheetBU406D Datasheet (PDF)

BU406D Silicon NPN Transistor Power Amp, High Voltage, Switch TO−220 Type Package Description: The BU406D is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed horizontal deflection output stages of TVs and CTVs. Features: D Collector−Emitter Sustaining Voltage: VCEV = 330V (Min) D Low saturation Voltage: VCE(sat) = 1V (Max) @ C = 5A D Fast Switching Speed: tf = 0.75s (Max) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . .

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BU406D Silicon NPN Transistor Power Amp, High Voltage, Switch TO−220 Type Package Description: The BU406D is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed horizontal deflection output stages of TVs and CTVs. Features: D Collector−Emitter Sustaining Voltage: VCEV = 330V (Min) D Low saturation Voltage: VCE(sat) = 1V (Max) @ C = 5A D Fast Switching Speed: tf = 0.75s (Max) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, Continuous IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total PDowerearteDiAsbsiopvaetio2n5(CTC. = .. +25C), ....... .P.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W 480mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.085C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current VCEO(sus) ICEV IEBO IC = 100mA, IB = 0, Note 1 VCE = 400V, VBE = −1.5V VEB = 6V, IC = 0 Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%. Min Typ Max Unit 200 − − V − − 15 mA − − 400 mA Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics hFE VCE(sat) VBE(sat) VF IC = 2A, VCE = 5V IC = 5A, IB = .


RCP2512 BU406D IXFN50N120SiC


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