Document
BU406D Silicon NPN Transistor Power Amp, High Voltage, Switch TO−220 Type Package
Description: The BU406D is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed horizontal deflection output stages of TVs and CTVs.
Features: D Collector−Emitter Sustaining Voltage: VCEV = 330V (Min) D Low saturation Voltage: VCE(sat) = 1V (Max) @ C = 5A D Fast Switching Speed: tf = 0.75s (Max)
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, Continuous
IC. .
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7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total
PDowerearteDiAsbsiopvaetio2n5(CTC.
= ..
+25C), .......
.P.D.
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. . . . . 60W 480mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.085C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current
VCEO(sus) ICEV IEBO
IC = 100mA, IB = 0, Note 1 VCE = 400V, VBE = −1.5V VEB = 6V, IC = 0
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
200 − − V − − 15 mA − − 400 mA
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics
hFE VCE(sat) VBE(sat)
VF
IC = 2A, VCE = 5V IC = 5A, IB = .