IXFN50N120SiC MOSFET Datasheet

IXFN50N120SiC Datasheet, PDF, Equivalent


Part Number

IXFN50N120SiC

Description

SiC Power MOSFET

Manufacture

IXYS

Total Page 7 Pages
Datasheet
Download IXFN50N120SiC Datasheet


IXFN50N120SiC
SiC Power MOSFET
IXFN50N120SiC
preliminary
ID25 = 47 A
VDSS = 1200 V
R =DS(on) max 50 mΩ
Part number
IXFN50N120SiC
D (3)
S
G
S
D
Backside: isolated
UL pending
G
(2)
S (1, 4)
Features / Advantages:
• High speed switching
with low capacitances
• High blocking voltage
with low RDS(on)
• Easy to parallel and simple to drive
• Avalanche ruggedness
• Resistant to latch-up
Applications:
• Solar inverters
• High voltage DC/DC converters
• Motor drives
• Switch mode power supplies
• UPS
• Battery chargers
• Induction heating
Package: SOT-227B (minibloc)
• Isolation Voltage: 3000 V~
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Base plate with Aluminium nitride
isolation
• Advanced power cycling
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales
office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2018 IXYS All rights reserved
20180223b
1-7

IXFN50N120SiC
IXFN50N120SiC
preliminary
MOSFET
Symbol
VDSS
VGSM
VGS
ID25
ID80
ID100
RDSon
Definitions
drain source breakdown voltage
max transient gate source voltage
continous gate source voltage
drain current
static drain source on resistance
VGS(th)
gate threshold voltage
IDSS drain source leakage current
IGSS
RG
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
RthJC
RthJH
gate source leakage current
internal gate resistance
input capacitance
output capacitance
reverse transfer (Miller) capacitance
total gate charge
gate source charge
gate drain (Miller) charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
thermal resistance junction to case
thermal resistance junction to heatsink
Conditions
VGS = 0 V, ID = 200µA
recommended operational value
TC = 25°C
VGS = 20 V
TC = 80°C
TC = 100°C
ID = 40 A; VGS = 20 V
TVJ = 25°C
TVJ = 150°C
ID = 10 mA; VGS = VDS
TVJ = 25°C
TVJ = 150°C
VDS = 1200 V; VGS = 0 V
TVJ = 25°C
TVJ = 150°C
VDS = 0 V; VGS = 20 V
TVJ = 25°C
VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C
VDS = 800 V; ID = 40 A; VGS = 0/20 V TVJ = 25°C
Inductive switching
VDS = 800 V; ID = 40 A
TVJ = 25°C
VGS = -5 / 20 V; RG = 10 Ω (external)
Freewheeling diode is Mosfet's body diode
Inductive switching
VDS = 800 V; ID = 40 A
TVJ = 150°C
VGS = -5 / 20 V; RG = 10 Ω (external)
Freewheeling diode is Mosfet's body diode
with heatsink compound; IXYS test setup
Ratings
min. typ. max.
1200
-10 +25
-5 +20
47
35
30
40 50
75
2.0 2.6
2.1
4.0
2 200
20
0.5
4.8
1900
160
13
100
22
36
23
9
75
19
1.08
0.29
0.04
23
9
100
22
1.48
0.35
0.10
0.55
0.62
V
V
V
A
A
A
mΩ
mΩ
V
V
µA
µA
µA
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
Source-Drain Diode
Symbol Definitions
Conditions
VSD forward voltage drop
IF = 40 A; VGS = -5 V
TVJ = 25°C
TVJ = 150°C
trr
QRM
IRM
dIF/dt
reverse recovery time
reverse recovery charge (intrinsic diode)
max. reverse recovery current
current slew rate
VGS = -5 V; IF = 40 A; VR = 800 V
Mosfet gate drive:
VGS = -5 / 20 V; RG = 10 Ω
TVJ = 25°C
trr
QRM
IRM
dIF/dt
reverse recovery time
reverse recovery charge (intrinsic diode)
max. reverse recovery current
current slew rate
VGS = -5 V; IF = 40 A; VR = 800 V
Mosfet gate drive:
VGS = -5 / 20 V; RG = 10 Ω
TVJ = 150°C
Note:
When using SiC Body Diode the maximum recommended VGS = -5V
Ratings
min. typ. max.
5.2
4.6
16
330
35
4800
26
810
45
4600
V
V
ns
nC
A
A/µs
ns
nC
A
A/µs
IXYS reserves the right to change limits, test conditions and dimensions.
© 2018 IXYS All rights reserved
20180223b
2-7


Features SiC Power MOSFET IXFN50N120SiC prelimin ary ID25 = 47 A VDSS = 1200 V R =DS (on) max 50 mΩ Part number IXFN50N120 SiC D (3) S G S D Backside: isolated UL pending G (2) S (1, 4) Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Avala nche ruggedness • Resistant to latch- up Applications: • Solar inverters High voltage DC/DC converters • Mo tor drives • Switch mode power suppli es • UPS • Battery chargers • Ind uction heating Package: SOT-227B (mini bloc) • Isolation Voltage: 3000 V~ Industry standard outline • RoHS co mpliant • Epoxy meets UL 94V-0 • Ba se plate with Aluminium nitride isol ation • Advanced power cycling Terms & Conditions of usage The data contain ed in this product data sheet is exclus ively intended for technically trained staff. The user will have to evaluate t he suitability of the product for the intended application and the completeness of the product data .
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