IXFN50N120SiC

SiC Power MOSFET IXFN50N120SiC preliminary ID25 = 47 A VDSS = 1200 V R =DS(on) max 50 mΩ Part number IXFN50N120SiC D (3) S G S D Backside: isolated UL pending G (2) S (1, 4) Features / Advantages: High speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Avalanche ruggedness Resistant to latch-up Applications: Solar inverters High voltage DC/DC converters Motor drives Switch mode power supplies UPS Battery chargers Induction heating Package: SOT-227B (minibloc) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate with Aluminium nitride isolation Advanced power cycling Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For informa...