MIXG240W1200PZTEH Module Datasheet

MIXG240W1200PZTEH Datasheet, PDF, Equivalent


Part Number

MIXG240W1200PZTEH

Description

X2PT IGBT Module

Manufacture

IXYS

Total Page 8 Pages
Datasheet
Download MIXG240W1200PZTEH Datasheet


MIXG240W1200PZTEH
X2PT IGBT Module
6-Pack + NTC + Shunt
Part number
MIXG240W1200PZTEH
MIXG240W1200PZTEH
VCES
IC25
VCE(sat)
advanced
= 1200 V
= 312 A
= 1.7 V
54-56
28-30
E72873
46
NTC
T1
1
2
45
59-61
T2
5
6
D1
49
9
10
50
T3
RS1
D2
51-53
T4
13
14
D3
39
T5
17
18
40
RS2
D4
41-43
T6
21
22
D5
31 32
33-35
RS3
D6
23-25
Features / Advantages:
• X2PT - 2nd generation Xtreme light
Punch Through
• Tvjm = 175°C
• Easy paralleling due to the positive temperature
coefficient of the on-state voltage
• Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
• Low VCE(sat) and low thermal resistance
• SONIC2™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and resonant-mode
power supplies
• Inductive heating, cookers
• Pumps, Fans
Package: E3-Pack
• Isolation Voltage: 4300 V~
• Industry standard outline
• RoHS compliant
• Base plate: Copper
internally DCB isolated
• Advanced power cycling
• PressFit pins
Option:
• Phase Change Material printed on
base plate
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales
office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
20180403a
© 2018 IXYS All rights reserved
1-8

MIXG240W1200PZTEH
MIXG240W1200PZTEH
advanced
Inverter IGBT T1 - T6
Symbol Definitions
VCES
VGES
VGEM
IC25
IC80
IC100
Ptot
VCE(sat)
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
on die level
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
(includes diode reverse current)
IGES
RG
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
RBSOA
ICM
SCSOA
tSC
ISC
RthJC
RthJH
gate emitter leakage current
internal gate resistance
input capacitance
output capacitance
reverse transfer (Miller) capacitance
total gate charge
gate source charge
gate drain (Miller) charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit duration
thermal resistance junction to case
thermal resistance junction to heatsink
Conditions
IR = 500 µA
IC = 200 A; VGE = 15 V
IC = 8 mA; VGE = VGE
VCE = VCES ; VGE = 0 V
VGE = ±20 V
VCE = 100 V; VGS = 0 V; f = 1 MHz
Ratings
min. typ. max.
TVJ = 25°C 1200
-20
-30
+20
+30
TC = 25°C
TC = 80°C
TC = 100°C
TC = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
6.0
312
233
200
938
1.7 2
2
7.5
0.15
2.5
500
6.5
10.6
VCE = 600 V; VGE = 0 /15 V; IC = 200 A
630
Inductive switching
VCE = 680 V; IC = 200 A
VGE = ±15 V; RG = 3.9 Ω (external)
TVJ = 25°C
Inductive switching
VCE = 680 V; IC = 200 A
VGE = ±15 V; RG = 3.9 Ω (external)
TVJ = 150°C
VGE = ±15 V; RG = 3.9 Ω
VCEmax = 1200 V
VCEmax = 1200 V
VCE = 900 V; VGE = ±15 V
non-repetitive
TVJ = 150°C
TVJ = 150°C
with heatsink compound; IXYS test setup
170
55
290
120
17.1
14.2
3.5
180
70
360
215
23.5
20.5
9.2
400
10
900
0.16
0.24
V
V
V
A
A
A
W
V
V
V
mA
mA
nA
Ω
nF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
A
µs
A
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2018 IXYS All rights reserved
20180403a
2-8


Features X2PT IGBT Module 6-Pack + NTC + Shunt Pa rt number MIXG240W1200PZTEH MIXG240W12 00PZTEH VCES IC25 VCE(sat) advanced = 1200 V = 312 A = 1.7 V 54-56 28-30 E72873 46 NTC T1 1 2 -dT 45 59-61 T2 5 6 D1 49 9 10 50 T3 RS1 D2 51- 53 T4 13 14 D3 39 T5 17 18 40 RS2 D4 41-43 T6 21 22 D5 31 32 33-35 RS3 D6 23-25 Features / Advantages: • X2PT - 2nd generation Xtreme light Punch Th rough • Tvjm = 175°C • Easy parall eling due to the positive temperature c oefficient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic • Low VCE(sat) and low thermal resistance • SONIC2™ diode - fast and soft reverse recovery - low operati ng forward voltage Applications: • A C motor drives • Solar inverter • M edical equipment • Uninterruptible po wer supply • Air-conditioning systems • Welding equipment • Switched-mod e and resonant-mode power supplies • Inductive heating, cookers • Pumps, Fans Package: E3-Pack.
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