MCMA240UI1600PED Module Datasheet

MCMA240UI1600PED Datasheet, PDF, Equivalent


Part Number

MCMA240UI1600PED

Description

Thyristor Module

Manufacture

IXYS

Total Page 7 Pages
Datasheet
Download MCMA240UI1600PED Datasheet


MCMA240UI1600PED
MCMA240UI1600PED
Thyristor Module
3~
Rectifier
Brake
Chopper
VRRM =
I DAV =
I FSM =
1600 V
240 A
1500 A
VCES = 1200 V
IC25 = 180 A
V =CE(sat) 1.7 V
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Part number
MCMA240UI1600PED
32
35
38
2-4
7-9
12-14
41-44
T1 T3 T5
D2 D4 D6
21-22
17-19
47-50
29 23-25
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
X2PT - 2nd generation Xtreme light Punch Through
Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
Applications:
3~ Rectifier with brake unit
for drive inverters
Backside: isolated
Package: E2-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
PressFit-Pins for PCB mounting
Height: 17 mm
Base plate: Copper
internally DCB isolated
Advanced power cycling
Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220i

MCMA240UI1600PED
MCMA240UI1600PED
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I DAV
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
bridge output current
VR/D = 1600 V
VR/D = 1600 V
IT = 80 A
I T = 240 A
IT = 80 A
I T = 240 A
TC = 80°C
rectangular
d = 120°
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
min.
typ. max. Unit
1700 V
1600 V
100 µA
20 mA
1.27 V
1.89 V
1.26 V
2.05 V
240 A
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
threshold voltage
slope resistance
for power loss calculation only
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 240 A
tP = 200 µs; diG /dt =0.45 A/µs;
IG = 0.45 A; V = VDRM
non-repet., IT = 80 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VR = 100 V; IT = 80A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
0.83 V
5.3 m
0.4 K/W
0.1 K/W
312 W
1.50 kA
1.62 kA
1.28 kA
1.38 kA
11.3 kA²s
10.9 kA²s
8.13 kA²s
7.87 kA²s
74 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
1.5 V
1.6 V
95 mA
200 mA
0.2 V
10 mA
450 mA
200 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220i


Features MCMA240UI1600PED Thyristor Module 3~ R ectifier Brake Chopper VRRM = I DAV = I FSM = 1600 V 240 A 1500 A VCES = 1 200 V IC25 = 180 A V =CE(sat) 1.7 V 3~ Rectifier Bridge, half-controlled (hig h-side) + Brake Unit Part number MCMA2 40UI1600PED 32 35 38 2-4 7-9 12-14 41 -44 T1 T3 T5 D2 D4 D6 21-22 17-19 47- 50 29 23-25 Features / Advantages: Package with DCB ceramic ● Improved temperature and power cycling ● Plan ar passivated chips ● Very low forwar d voltage drop ● Very low leakage cur rent ● X2PT - 2nd generation Xtreme l ight Punch Through ● Rugged X2PT desi gn results in: - short circuit rated fo r 10 µsec. - very low gate charge - lo w EMI - square RBSOA @ 2x Ic ● Thin w afer technology combined with X2PT desi gn results in a competitive low VCE(sat ) and low thermal resistance Applicati ons: ● 3~ Rectifier with brake unit f or drive inverters Backside: isolated Package: E2-Pack ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● PressFit-Pins for PCB mounti.
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