MITH450PF1200LP Module Datasheet

MITH450PF1200LP Datasheet, PDF, Equivalent


Part Number

MITH450PF1200LP

Description

IGBT Module

Manufacture

IXYS

Total Page 5 Pages
Datasheet
Download MITH450PF1200LP Datasheet


MITH450PF1200LP
IGBT Module
Phase leg
Part number
MITH450PF1200LP
MITH450PF1200LP
tentative
VCES
IC25
VCE(sat)
= 1200 V
= 612 A
= 1.75 V
76
5
T2
4
T1
D2
21
D1
3
Features / Advantages:
• Trench IGBT
- low VCE(sat)
- easy paralleling due to the positive
temperature coefficient of the on-state
voltage
- Tvjm = 175°C
- square RBSOA @ 2x Ic
- short circuit rated for 10 µsec.
- low gate charge
- low EMI
• Free wheeling diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
• AC motor drives
• Solar inverter
• Air-conditioning systems
• high power converters
• UPS
Package: Y3-M6
• Isolation Voltage: 4000 V~
• Industry standard outline
• RoHS compliant
• Copper base plate
• internally DCB isolated
• ultrasonic welded power terminals
• advanced power cycling
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff.The user will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to his application.The specifications of our components may not be considered as an assurance of component characteristics.The information in the valid application- and assembly notes must be consi-
dered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2016 IXYS All rights reserved
20160621
1-5

MITH450PF1200LP
MITH450PF1200LP
tentative
IGBT T1, T2
Symbol Definitions
VCES
VGES
IC25
IC80
ICRM
collector emitter voltage
max. DC gate voltage
collector current
repetitive peak collector current
Ptot
VCE(sat)
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
RG
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
SCSOA
tSC
ISC
RthJC
RthJH
gate emitter leakage current
internal gate resistance
input capacitance
output capacitance
reverse transfer (Miller) capacitance
total gate charge
gate source charge
gate drain (Miller) charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance junction to heatsink
Conditions
TVJ = 25°C
TC = 25°C
TC = 80°C
Pulse width and repetition rate should not be
such that device junction temperature (TJ) does
not exceed the max. rating of 175°C
Ratings
min. typ. max.
1200
-20 +20
612
467
1200
IC = 400 A; VGE = 15 V
on die level
IC = 400 A; VGE = 15 V
between power terminals
IC = 16 mA; VCE = VGE
VCE = 1200 V; VGE = 0 V
VGE = ±20 V; VCE = 0 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = -8 V/15 V;
IC = 400A
TC = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1.75
2.20
1.95
2.40
5.5 6
100
2000
1.9
24
2360
2356
4420
2080
2.2
2.4
6.5
300
400
Inductive switching
VCE = 600 V; IC = 400 A
VGE = ±15 V; RG = 3.0 Ω (external)
TVJ = 150°C
350
60
700
65
39
42
VCEmax = 1200 V
VCE = 720 V; VGE = ±15 V
non-repetitive
TVJ = 150°C
per IGBT
with heatsink compound; IXYS test setup
10
0.072
0.10
V
V
A
A
A
W
V
V
V
V
V
µA
µA
nA
Ω
nF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
µs
A
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2016 IXYS All rights reserved
20160621
2-5


Features IGBT Module Phase leg Part number MITH45 0PF1200LP MITH450PF1200LP tentative VCES IC25 VCE(sat) = 1200 V = 612 A = 1.75 V 76 5 T2 4 T1 D2 21 D1 3 t entative Features / Advantages: • Tr ench IGBT - low VCE(sat) - easy paralle ling due to the positive temperature co efficient of the on-state voltage - Tv jm = 175°C - square RBSOA @ 2x Ic - sh ort circuit rated for 10 µsec. - low g ate charge - low EMI • Free wheeling diode - fast and soft reverse recovery - low operating forward voltage Applic ations: • AC motor drives • Solar i nverter • Air-conditioning systems high power converters • UPS Packag e: Y3-M6 • Isolation Voltage: 4000 V~ • Industry standard outline • RoHS compliant • Copper base plate • in ternally DCB isolated • ultrasonic we lded power terminals • advanced power cycling Terms & Conditions of usage T he data contained in this product data sheet is exclusively intended for techn ically trained staff.The user will have to evaluate the suitability of the product for the inte.
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