MIXD50W650TED IGBT Datasheet

MIXD50W650TED Datasheet, PDF, Equivalent


Part Number

MIXD50W650TED

Description

Trench XPT IGBT

Manufacture

IXYS

Total Page 4 Pages
Datasheet
Download MIXD50W650TED Datasheet


MIXD50W650TED
Six-Pack
Trench XPT IGBT
MIXD50W650TED
VCES = 650 V
IC25 = 71 A
VCE(sat) typ. = 1.55 V
Part name (Marking on product)
MIXD50W650TED
25, 26
17
NTC
1
2
18
3
4
27, 28
5
6
7
8
9
10
11
12
15, 16
23, 24
21, 22
19, 20
13, 14
E72873
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
20130619
1-4

MIXD50W650TED
MIXD50W650TED
IGBTs
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
ICM
VCEK
tSC
(SCSOA)
RthJC
RthCH
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Diodes
Symbol
VRRM
IF25
IF80
Definitions
max. repetitive reverse voltage
forward current
Symbol Conditions
VF
QRR
IRM
trr
Erec(off)
RthJC
RthCH
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery losses at turn-off
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
transient
TVJ = 25°C
TVJ = 175°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 50 A; VGE = 15 V
(on die level)
TVJ = 25°C
TVJ = 150°C
IC = 0.8 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 150°C
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 0...15 V; IC = 50 A
inductive load
VCE = 300 V; IC = 50 A
VGE = ±15 V; RG = 15 W
TVJ = 150°C
RBSOA; VGE = ±15 V; RG = 15 W; L = 100 µH
clamped inductive load;
TVJ = 150°C
VCE = 360 V; VGE = ±15 V;
RG = 15 W; non-repetitive
TVJ = 150°C
(per IGBT)
(per IGBT)
min.
5.0
Ratings
typ. max.
650
±20
±30
71
54
190
1.55 1.80
1.85
6.5
20 200
0.60
500
tbd
130
25
45
120
40
0.80
1.20
tbd
100
650
10
200
0.80
0.30
Unit
V
V
V
A
A
W
V
V
V
µA
mA
nA
nF
nC
ns
ns
ns
ns
mJ
mJ
mJ
A
V
µs
A
K/W
K/W
Conditions
TVJ = 175°C
IF = 50 A
VR = 325 V; IF = 50 A
diF /dt = -900 A/µs
(per diode)
(per diode)
TC = 25°C
TC = 80°C
Maximum Ratings
650 V
55 A
40 A
TVJ = 25°C
TVJ = 150°C
TVJ = 150°C
Characteristic Values
min. typ. max.
1.7 2.0
1.9
V
V
4.5 µC
45 A
150 ns
1.0 mJ
1.2 K/W
0.4 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
20130619
2-4


Features Six-Pack Trench XPT IGBT MIXD50W650TED VCES = 650 V IC25 = 71 A VCE(sat) ty p. = 1.55 V Part name (Marking on prod uct) MIXD50W650TED 25, 26 17 NTC 1 2 18 3 4 27, 28 5 6 7 8 9 10 11 12 1 5, 16 23, 24 21, 22 19, 20 13, 14 E728 73 Pin configuration see outlines. ten tative Features: • Easy paralleling due to the positive temperature coe fficient of the on-state voltage Rugged XPT design (Xtreme light Pun ch Through) results in: - short circuit rated for 10 µsec. - very low gate ch arge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined wit h the XPT design results in a compe titive low VCE(sat) • SONIC™ di ode - fast and soft reverse recovery - low operating forward voltage Appl ication: • AC motor drives • Solar inverter • Medical equipment • Unin terruptible power supply • Air-condit ioning systems • Welding equipment Switched-mode and resonant-mode pow er supplies Package: • "E2-Pack" standard outline • Insulated copper base plate • Solde.
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