MIXD50W650TED

Six-Pack Trench XPT IGBT MIXD50W650TED VCES = 650 V IC25 = 71 A VCE(sat) typ. = 1.55 V Part name (Marking on product) MIXD50W650TED 25, 26 17 NTC 1 2 18 3 4 27, 28 5 6 7 8 9 10 11 12 15, 16 23, 24 21, 22 19, 20 13, 14 E72873 Pin configuration see outlines. tentative Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Application: AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E2-Pack" standard outline Insulated copper base plate Soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130619 1-4 tentative MIXD50W650TED IGBTs Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage VGE(th) ICES gate emitter threshold voltage collector emitter le...