MIEB100W1200DPFTEH IGBT Datasheet

MIEB100W1200DPFTEH Datasheet, PDF, Equivalent


Part Number

MIEB100W1200DPFTEH

Description

SPT + IGBT

Manufacture

IXYS

Total Page 7 Pages
Datasheet
Download MIEB100W1200DPFTEH Datasheet


MIEB100W1200DPFTEH
Six-Pack
SPT+ IGBT
Preliminary data
Part name (Marking on product)
MIEB100W1200DPFTEH
MIEB 100W1200DPFTEH
VCES = 1200 V
IC25 = 170 A
VCE(sat) typ. = 1.9 V
30, 31, 32
1
19
2
NTC
20
3
4
33, 34, 35
D1
T1 5
6
27
28
29
D2
T2 7
8
D3
T3 9
10
24
25
26
D4
T4 11
12
16, 17, 18
D5
T5
21
22
23
D6
T6
13, 14, 15
E 72873
Features:
• SPT+ IGBT technology
• low saturation voltage
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• space savings
• HiPerFRED™ diode
Application:
• AC motor control
• AC servo and robot drives
• power supplies
Package:
• designed for wave soldering
• with copper base plate
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
201311114
1-7

MIEB100W1200DPFTEH
MIEB 100W1200DPFTEH
Ouput Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
Ptot
VCE(sat)
VGE(th)
ICES
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
(on chip level) 
gate emitter threshold voltage
collector emitter leakage current
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
RBSOA
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
SCSOA
tSC
RthJC
RthJH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance junction to heatsink
Conditions
continuous
transient
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 100 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 4 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 100 A
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH
TVJ = 125°C
VGE = ±15 V; RG = 10 W;
VCE = 900 V; VGE = ±10 V;
RG = 3.9 W; non-repetitive
(per IGBT)
(IXYS test setup)
TVJ = 125°C
VCEK = 1200 V
TVJ = 125°C
min.
5
Ratings
typ. max.
1200
±20
±30
171
119
600
1.9 2.3
2.1 2.5
67
1.4
6
1
7430
750
120
60
480
240
12
10
6
Unit
V
V
V
A
A
W
V
V
V
mA
mA
µA
pF
nC
ns
ns
ns
ns
mJ
mJ
mJ
200 A
10 µs
0.21 K/W
0.27 0.37 K/W
Output Inverter D1 - D6
Symbol
VRRM
IF25
IF80
VF
Irr
trr
Qrr
Erec
RthJC
RthJH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
(on chip level) 
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance junction to heatsink
Conditions
IF = 100 A; VGE = 0 V
inductive load
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 10 W
LS = 70 nH; -di/dt = 2300 A/µs
(per diode)
(IXYS test setup)
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
min.
Ratings
typ. max.
1200
199
127
2.5
1.8
165
290
18.6
6
0.3
0.39 0.45
TC = 25°C unless otherwise stated
Unit
V
A
A
V
V
A
ns
µC
mJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
201311114
2-7


Features Six-Pack SPT+ IGBT Preliminary data Part name (Marking on product) MIEB100W1200 DPFTEH MIEB 100W1200DPFTEH VCES = 120 0 V IC25 = 170 A VCE(sat) typ. = 1.9 V 30, 31, 32 1 19 2 NTC 20 3 4 33, 34 , 35 D1 T1 5 6 27 28 29 D2 T2 7 8 D3 T3 9 10 24 25 26 D4 T4 11 12 16, 17, 1 8 D5 T5 21 22 23 D6 T6 13, 14, 15 E 72 873 Features: • SPT+ IGBT technology • low saturation voltage • low swi tching losses • switching frequency u p to 30 kHz • square RBSOA, no latch up • high short circuit capability positive temperature coefficient for easy parallelling • MOS input, vo ltage controlled • ultra fast free wh eeling diodes • solderable pins for P CB mounting • space savings • HiPer FRED™ diode Application: • AC moto r control • AC servo and robot drives • power supplies Package: • desig ned for wave soldering • with copper base plate IXYS reserves the right to change limits, test conditions and dime nsions. © 2013 IXYS All rights reserved 201311114 1-7 MIEB 100W1200DPFTEH Ouput Inverter T1 - T6.
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