Document
Standard Rectifier Module
Phase leg
Part number
MDD95-20N1B
2 13
MDD95-20N1B
VRRM I FAV VF
= 2x 2000 V = 120 A = 1.13 V
Backside: isolated
Features / Advantages:
● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
Applications:
● Diode for main rectification ● For single and three phase
bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: TO-240AA
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
Rectifier
Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 2000 V
VR = 2000 V
forward voltage drop
IF = 150 A
IF = 300 A
IF = 150 A
IF = 300 A
average forward current
TC = 100°C
RMS forward current
180° sine
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDD95-20N1B
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
Ratings
min. typ. max. Unit 2100 V 2000 V 200 µA 15 mA 1.20 V 1.43 V 1.13 V 1.46 V 120 A 180 A 0.75 V 1.95 mΩ 0.26 K/W
0.2 K/W 481 W 2.80 kA 3.03 kA 2.38 kA 2.57 kA 39.2 kA²s 38.1 kA²s 28.3 kA²s 27.5 kA²s
116 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
MDD95-20N1B
Package TO-240AA
Ratings
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
min.
-40 -40 -40
typ. max. 200 150 125 125
76
Unit A °C °C °C g
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
2.5
terminal torque
2.5
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
13.0 9.7 16.0 16.0
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
3600 3000
4 Nm 4 Nm
mm mm
V V
UL Logo
Date Code + Location
yywwZ
XXXXXXXX
123456
Part Number Lot#
Circuit
2D Barcode
Ordering Standard
Ordering Number MDD95-20N1B
Marking on Product MDD95-20N1B
Delivery Mode Box
Quantity Code No. 36 470228
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.75 0.76
* on die level
T VJ = 150°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
Outlines TO-240AA
MDD95-20N1B
2 13
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191202c
MDD95-20N1B
Rectifier
3000
2500
50 Hz, 80% VRRM
105 VR = 0 V
2000
IFSM
1500
[A]
1000
500
TVJ = 45°C TVJ = 150°C
I2t [A2s]
TVJ = 45°C TVJ = 150°C
0 10-3
10-2
10-1
t [s]
100
101
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
104 1
23
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
200
150
PT
100
[W]
50
DC 180° sin 120°
60° 30°
RthJA
[K/W] 0.4 0.6 0.8 1 1.2 1.5 2 3
0 0 50 100 150 0 50 100 150
ITAVM, IFAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
200
800
600
Ptot
400
[W]
200
RL
Circuit B2 2x MDD95
RthKA
[K/W] 0.1 0.15 0.2 0.3 0.4 0.5 0.6 0.7
250
200
150
IFAVM
100
[A]
50
DC 180° sin 120°
60° 30°
0 0 50 100 150 200
TC [°C]
Fig. 3 Maximum forward current at case temperature
0
0
50 100 150 200 .