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MDD95-20N1B Dataheets PDF



Part Number MDD95-20N1B
Manufacturers IXYS
Logo IXYS
Description Standard Rectifier
Datasheet MDD95-20N1B DatasheetMDD95-20N1B Datasheet (PDF)

Standard Rectifier Module Phase leg Part number MDD95-20N1B 2 13 MDD95-20N1B VRRM I FAV VF = 2x 2000 V = 120 A = 1.13 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC .

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Standard Rectifier Module Phase leg Part number MDD95-20N1B 2 13 MDD95-20N1B VRRM I FAV VF = 2x 2000 V = 120 A = 1.13 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors Package: TO-240AA ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Height: 30 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c Rectifier Symbol VRSM VRRM IR VF I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 2000 V VR = 2000 V forward voltage drop IF = 150 A IF = 300 A IF = 150 A IF = 300 A average forward current TC = 100°C RMS forward current 180° sine threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz MDD95-20N1B TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 125 °C TVJ = 150°C TVJ = 150°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C Ratings min. typ. max. Unit 2100 V 2000 V 200 µA 15 mA 1.20 V 1.43 V 1.13 V 1.46 V 120 A 180 A 0.75 V 1.95 mΩ 0.26 K/W 0.2 K/W 481 W 2.80 kA 3.03 kA 2.38 kA 2.57 kA 39.2 kA²s 38.1 kA²s 28.3 kA²s 27.5 kA²s 116 pF IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c MDD95-20N1B Package TO-240AA Ratings Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal min. -40 -40 -40 typ. max. 200 150 125 125 76 Unit A °C °C °C g MD M T d Spp/App d Spb/Apb V ISOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface | striking distance through air terminal to terminal terminal to backside 13.0 9.7 16.0 16.0 isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 3600 3000 4 Nm 4 Nm mm mm V V UL Logo Date Code + Location yywwZ XXXXXXXX 123456 Part Number Lot# Circuit 2D Barcode Ordering Standard Ordering Number MDD95-20N1B Marking on Product MDD95-20N1B Delivery Mode Box Quantity Code No. 36 470228 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.75 0.76 * on die level T VJ = 150°C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c Outlines TO-240AA MDD95-20N1B 2 13 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202c MDD95-20N1B Rectifier 3000 2500 50 Hz, 80% VRRM 105 VR = 0 V 2000 IFSM 1500 [A] 1000 500 TVJ = 45°C TVJ = 150°C I2t [A2s] TVJ = 45°C TVJ = 150°C 0 10-3 10-2 10-1 t [s] 100 101 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 104 1 23 t [ms] 6 8 10 Fig. 2 I2t versus time (1-10 ms) 200 150 PT 100 [W] 50 DC 180° sin 120° 60° 30° RthJA [K/W] 0.4 0.6 0.8 1 1.2 1.5 2 3 0 0 50 100 150 0 50 100 150 ITAVM, IFAVM [A] TA [°C] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode) 200 800 600 Ptot 400 [W] 200 RL Circuit B2 2x MDD95 RthKA [K/W] 0.1 0.15 0.2 0.3 0.4 0.5 0.6 0.7 250 200 150 IFAVM 100 [A] 50 DC 180° sin 120° 60° 30° 0 0 50 100 150 200 TC [°C] Fig. 3 Maximum forward current at case temperature 0 0 50 100 150 200 .


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