MDNA660U2200PTEH Module Datasheet

MDNA660U2200PTEH Datasheet, PDF, Equivalent


Part Number

MDNA660U2200PTEH

Description

High Voltage Standard Rectifier Module

Manufacture

IXYS

Total Page 5 Pages
Datasheet
Download MDNA660U2200PTEH Datasheet


MDNA660U2200PTEH
MDNA660U2200PTEH
High Voltage Standard Rectifier Module
3~ Rectifier Bridge + NTC
3~
Rectifier
VRRM =
I DAV =
I FSM =
2200 V
660 A
5000 A
Part number
MDNA660U2200PTEH
1-11
47-53
39-45
31-37
54-58
12-22
60
61
23-30
Backside: isolated
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: E3-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
PressFit-Pins for PCB mounting
Height: 17 mm
Base plate: Copper
internally DCB isolated
Advanced power cycling
Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220g

MDNA660U2200PTEH
Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 2200 V
VR = 2200 V
IF = 220 A
IF = 660 A
IF = 220 A
IF = 660 A
TC = 85°C
rectangular
d=
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 700 V; f = 1 MHz
MDNA660U2200PTEH
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max. Unit
2300 V
2200 V
400 µA
6 mA
1.28 V
1.95 V
1.19 V
1.95 V
660 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.77 V
1.8 m
0.15 K/W
0.075
K/W
830 W
5.00 kA
5.40 kA
4.25 kA
4.59 kA
125.0 kA²s
121.3 kA²s
90.3 kA²s
87.6 kA²s
158 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220g


Features MDNA660U2200PTEH High Voltage Standard Rectifier Module 3~ Rectifier Bridge + NTC 3~ Rectifier VRRM = I DAV = I FSM = 2200 V 660 A 5000 A Part number MD NA660U2200PTEH 1-11 47-53 39-45 31-37 54-58 12-22 60 61 23-30 Backside: iso lated Features / Advantages: ● Packa ge with DCB ceramic ● Improved temper ature and power cycling ● Planar pass ivated chips ● Very low forward volta ge drop ● Very low leakage current A pplications: ● Diode for main rectifi cation ● For three phase bridge confi gurations ● Supplies for DC power equ ipment ● Input rectifiers for PWM inv erter ● Battery DC power supplies ● Field supply for DC motors Package: E 3-Pack ● Isolation Voltage: 3600 V~ Industry standard outline ● RoHS c ompliant ● PressFit-Pins for PCB moun ting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Adva nced power cycling ● Phase Change Mat erial available Disclaimer Notice Info rmation furnished is believed to be accurate and reliable. However, users should independently evalua.
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