Document
MPSA28 Silicon NPN Transistor Darlington, General Purpose Amplifier, TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired. These are steady state limits and based on a maximum junction temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current
Emitter Cutoff Current ON Characteristics (Note 2)
V(BR)CES V(BR)CBO V(BR)EBO
ICBO ICES IEBO
IC = 100A, VBE = 0 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VCE = 60V, VBE = 0 VEB = 10V, IC = 0
80 − − V 80 − − V 12 − − V − − 100 nA − − 500 nA − − 100 nA
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage Small Signal Characteristics
hFE VCE(sat) VBE(on)
IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V IC = 10mA, IB = 0.01mA IC = 100mA, IB = 0.1mA IC = 100mA, VCE = 5V
10,000 − − 10,000 − −
− − 1.2 V − − 1.5 V − − 2.0 V
Current Gain − Bandwidth Product Output Capacitance
fT IC = 10mA, VCE = 5V, f = 100MHz 125 − − MHz
Cobo VCB = 1V, IE = 0, f = 1MHz
− − 8 pF
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%
C B
E
.210 (5.33) Max .500 (12.7) Min
.135 (3.45) Min Seating Plane .021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max .205 (5.2) Max
EBC
.050 (1.27) .165 (4.2) Max .105 (2.67) Max
.