MPSA28 Transistor Datasheet

MPSA28 Datasheet, PDF, Equivalent


Part Number

MPSA28

Description

Silicon NPN Transistor

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download MPSA28 Datasheet


MPSA28
MPSA28
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
TO92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
CollectorEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired. These are steady state limits and based on a maximum junction temperature
of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
IC = 100A, VBE = 0
IC = 100A, IE = 0
IE = 10A, IC = 0
VCB = 60V, IE = 0
VCE = 60V, VBE = 0
VEB = 10V, IC = 0
80 − − V
80 − − V
12 − − V
− − 100 nA
− − 500 nA
− − 100 nA
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Small Signal Characteristics
hFE
VCE(sat)
VBE(on)
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 10mA, IB = 0.01mA
IC = 100mA, IB = 0.1mA
IC = 100mA, VCE = 5V
10,000 − −
10,000 − −
− − 1.2 V
− − 1.5 V
− − 2.0 V
Current Gain Bandwidth Product
Output Capacitance
fT IC = 10mA, VCE = 5V, f = 100MHz 125 − − MHz
Cobo VCB = 1V, IE = 0, f = 1MHz
− − 8 pF
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%

MPSA28
C
B
E
.210
(5.33)
Max
.500
(12.7)
Min
.135 (3.45) Min
Seating Plane
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max


Features MPSA28 Silicon NPN Transistor Darlington , General Purpose Amplifier, TO−92 Ty pe Package Absolute Maximum Ratings: ( TA = +25C, Note 1 unless otherwise s pecified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−B ase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800m A Total Device Dissipation (TA = +25 C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C O.
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