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MPSA28 Dataheets PDF



Part Number MPSA28
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet MPSA28 DatasheetMPSA28 Datasheet (PDF)

MPSA28 Silicon NPN Transistor Darlington, General Purpose Amplifier, TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . ..

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MPSA28 Silicon NPN Transistor Darlington, General Purpose Amplifier, TO−92 Type Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These are steady state limits and based on a maximum junction temperature of +150C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage Collector−Base Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO IC = 100A, VBE = 0 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VCE = 60V, VBE = 0 VEB = 10V, IC = 0 80 − − V 80 − − V 12 − − V − − 100 nA − − 500 nA − − 100 nA DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage Small Signal Characteristics hFE VCE(sat) VBE(on) IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V IC = 10mA, IB = 0.01mA IC = 100mA, IB = 0.1mA IC = 100mA, VCE = 5V 10,000 − − 10,000 − − − − 1.2 V − − 1.5 V − − 2.0 V Current Gain − Bandwidth Product Output Capacitance fT IC = 10mA, VCE = 5V, f = 100MHz 125 − − MHz Cobo VCB = 1V, IE = 0, f = 1MHz − − 8 pF Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2% C B E .210 (5.33) Max .500 (12.7) Min .135 (3.45) Min Seating Plane .021 (.445) Dia Max .100 (2.54) .105 (2.67) Max .205 (5.2) Max EBC .050 (1.27) .165 (4.2) Max .105 (2.67) Max .


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