1N4150 Diode Datasheet

1N4150 Datasheet, PDF, Equivalent


Part Number

1N4150

Description

High Conductance Ultra Fast Diode

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download 1N4150 Datasheet


1N4150
1N4150
High Conductance Ultra Fast Diode
Features:
D DO35 Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Working Inverse Voltage, WIV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Total
DDeveircaeteDaisbsoipveati+o2n5, PCD
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. . . 500mW
3.33mW/C
Average Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Recurrent Peak Forward Current, if . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Peak
Forward Surge
Pulse Width =
C1.u0rrseencto, nIFd(su.rg. e.).
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1.0A
Pulse Width = 1.0 microsecond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +200C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C/W
Note 1. These ratings are limiting values above which the serviceability of the device may be im-
paired.
Note 2. These ratings are based on a maximum junction temperature of +200C.
Note 3. These are steady state limits.
Electrical Characteristics: (TA = +25C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakdown Voltage
Forward Voltage
BV IR = 5A
VF IF = 1mA
IF = 10mA
IF = 50mA
IF = 100mA
IF = 200mA
Min Typ Max Unit
75 − − V
540 620 mV
660 740 mV
760 860 mV
820 920 mV
0.87 1.0 V

1N4150
Electrical Characteristics (Cont’d): (TA = +25C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Current
Diode Capacitance
Reverse Recovery Time
Forward Recovery Time
IR VR = 50V
− − 100 nA
VR = 50V, TA = +150C
− − 100 A
CO VR = 0, f = 1MHz
− − 2.5 pF
trr IF = IR =10mA to 200mA, RL = 100
− − 4 ns
IF = IR =200mA to 400mA, RL = 100− − 6 ns
tfr IF = 200mA, VFR = 1V
− − 10 ns
1.000 (25.4)
Min
.300 (7.62)
Max
.018 (.457) Dia Max
Color Band Denotes Cathode
.107 (2.71) Dia Max


Features 1N4150 High Conductance Ultra Fast Diode Features: D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Working I nverse Voltage, WIV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Total DDeveircaete Daisbsoipveati+o2n5, PCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW 3.33mW/C Avera ge Rectified Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Recurrent Peak Forward Current , if . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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