TIP110 Transistor Datasheet

TIP110 Datasheet, PDF, Equivalent


Part Number

TIP110

Description

Silicon NPN Transistor

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download TIP110 Datasheet


TIP110
TIP110
Silicon NPN Transistor
Darlington Power Amp, Switch
TO220 Type Package
Description:
The TIP110 is a silicon NPN Darlington transistor in a TO220 type package designed for general
purpose amplifier and lowspeed switching applications.
Features:
D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A
D CollectorEmitter Sustaining Voltage: VCEO(sus) = 60V (Min) at IC = 30mA
D Low CollectorEmitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A
Absolute Maximum Ratings: (Note 1)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
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2A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total
PDowerearteDiAsbsiopvaetio+n25(TCC
=
..
+25C),
.......
.P.D.
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. . . 50W
0.4W/C
Total
PDowerearteDiAsbsiopvaetio+n25(TCA
= +25C),
.........
P. .D.
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. . . . . 2.0W
0.016W/C
Unclamped Inductive Load Energy, E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mJ
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be assumed, dam-
ages may occur and reliability may be affected.

TIP110
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
VCEO(sus)
ICBO
ICEO
IEBO
IC = 30mA, IB = 0, Note 3
VCB = 60V, IE = 0
VCE = 30V, IB = 0
VBE = 5V, IC = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
IC = 2A, VCE = 4V
SmallSignal Current Gain
Output Capacitance
hfe IC = 0.75A, VCE = 10V, f = 1MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min
60
1000
500
25
Typ
Max Unit
V
1.0 mA
2.0 mA
2 mA
2.5 V
2.8 V
100 pF
C
B
.420 (10.67)
Max
E
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab


Features TIP110 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Packag e Description: The TIP110 is a silicon NPN Darlington transistor in a TO−22 0 type package designed for general pur pose amplifier and low−speed switchin g applications. Features: D High DC Cu rrent Gain: hFE = 2500 (Typ) at IC = 1A D Collector−Emitter Sustaining Volta ge: VCEO(sus) = 60V (Min) at IC = 30mA D Low Collector−Emitter Saturation Vo ltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) C ollector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Vo ltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, Continuous IC. . . . . . . . . . ..
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