MMBT5551 Transistor Datasheet

MMBT5551 Datasheet, PDF, Equivalent


Part Number

MMBT5551

Description

Silicon NPN Transistor

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download MMBT5551 Datasheet


MMBT5551
MMBT5551
Silicon NPN Transistor
High Voltage Amp/Driver
SOT23 Type Surface Mount Package
Description:
The MMBT5551 is a silicon NPN transistor in an SOT23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total
PDowerearteDiAsbsiopvaetio2n5(CTA.
= +25C,
........
FR5
......
Board,
......
Note
.....
1),
...
P. .D.
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. . 225mW
1.8mW/C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW
Total
PDowerearteDiAsbsiopvaetio2n5(CTA.
= +25C,
........
Alumina
........
Substrate, Note 2),
.................
.P.D.
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. . 300mW
2.4mW/C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417C/mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Note 1. FR5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 1mA, IB = 0, Note 3
IC = 100A, IE = 0
IE = 10A, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = +100C
VEB = 4V, IC = 0
Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
Min Typ Max Unit
160
180
6
−−
−−
−−
V
V
V
50 nA
50 A
50 nA

MMBT5551
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 50mA, VCE = 5V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
80
80 250
30
− − 0.15 V
− − 0.20 V
− − 1.0 V
− − 1.0 V
Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051
(1.3)


Features MMBT5551 Silicon NPN Transistor High Vol tage Amp/Driver SOT−23 Type Surface M ount Package Description: The MMBT5551 is a silicon NPN transistor in an SOT 23 type surface mount case designed f or use in high voltage applications. A bsolute Maximum Ratings: Collector−E mitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltag e, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Co ntinuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total PDowerearte DiAsbsiopvaetio2n5(CTA. = +25C, ........ FR−5 ...... Board, ...... Note ..... 1), ... P. .D. . . . . . . . . . . . . . . . . . . . . .
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