MMBT5551

MMBT5551 Silicon NPN Transistor High Voltage Amp/Driver SOT−23 Type Surface Mount Package Description: The MMBT5551 is a silicon NPN transistor in an SOT−23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total PDowerearteDiAsbsiopvaetio2n5(CTA. = +25C, ........ FR−5 ...... Board, ...... Note ..... 1), ... P. .D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW 1.8mW/C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW Total PDowerearteDiAsbsiopvaetio2n5(CTA. = +25C, ........ Alumina ........ Substrate, Note 2), ................. .P.D. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW 2.4mW/C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . ....