2N3702 Transistor Datasheet

2N3702 Datasheet, PDF, Equivalent


Part Number

2N3702

Description

Silicon PNP Transistor

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download 2N3702 Datasheet


2N3702
2N3702
Silicon PNP Transistor
Audio Power Amplifier
TO92 Type Package
mAbsolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
CollectDoreDraitsesiapbaotivoen,+P2C5C. .
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625mW
5mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of the device may be im-
paired and are based on maximum temperature of +150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Cob
fT
IC = 10mA, IE = 0
IC = 100A,IB = 0 , Note 2
IE = 100A, IC = 0
VCB = 20V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 50mA, Note 2
IC = 50mA, IB = 5mA, Note 2
VCE = 5V, IC = 50mA, Note 2
VCB = 10V, f = 1.0 MHz
IC = 50 mA, VCE = 5V
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
40 − − V
25 − − V
5 − −V
− − 100 nA
− − 100 nA
60 300
− − 0.25 V
0.6 1 V
− − 12 pF
100 − − MHz

2N3702
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
ECB
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max


Features 2N3702 Silicon PNP Transistor Audio Powe r Amplifier TO−92 Type Package mAbso lute Maximum Ratings: (TA = +25C unl ess otherwise specified) Collector−Ba se Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Emitter Volt age, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V C ollector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Colle ctDoreDraitsesiapbaotivoen,+P2C5C. . .. .. . . .. .. ... ... .. .. . . .. .. . . .. .. . . .. .. . . .. .. . . .. .. . . .. .. . . .. .. . . .. .. . . .. .. ... ... .. .. . . .. .. . . .. .. . . .. .. . . .. .. 625mW 5mW/C Operatin.
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