MJE15030 Transistors Datasheet

MJE15030 Datasheet, PDF, Equivalent


Part Number

MJE15030

Description

Silicon Complementary Transistors

Manufacture

NTE

Total Page 2 Pages
Datasheet
Download MJE15030 Datasheet


MJE15030
MJE15030 (NPN) & MJE15031 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
TO220 Type Package
Description:
The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO220 type
case designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
hFE
=
=
40
20
Min
MIn
@
@
IICC
=
=
3A
4A
D CollectorEmitter Sustaining Voltage: VCEO(sus) = 150V Min
D High Current GainBandwidth Product: fT = 30MHz Min @ IC = 500mA
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
EmitterBase Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
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8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Total
PDowerearteDiAsbsiopvaetio2n5(CTC.
=
..
+25C),
.......
.P.D.
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. . . . 50W
0.04W/C
Total
PDowerearteDiAsbsiopvaetio2n5(CTA.
= +25C),
.........
P. .D.
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. . . . . . 2W
0.016W/C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5C/W

MJE15030
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCE(sus)
ICEO
ICBO
IEBO
IC = 10mA, IB = 0, Note 1
VCE = 150V, IB = 0
VCE = 150V, IE = 0
VCE = 150V, IC = 0
DC Current Gain
DC Current Gain Linearity
hFE VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.1A
hFE VCE from 2V to 20V,
IC from 0.1A to 3A
NPN to PNP
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
VCE(sat) IC = 1A, IB = 0.1A
VBE(on) VCE = 2V, IC = 1A
Current GainBandwidth Product
ft VCE = 10V, IC = 500mA,
ftest = 10MHz, Note 2
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Note 2. fT = |hfe|  ftest
.420 (10.67)
Max
.110 (2.79)
Min Typ Max Unit
150 − − V
− − 0.1 mA
− − 10 A
− − 10 A
40
40
40
20
2
3
− − 0.5 V
−−1V
30
MHz
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab


Features MJE15030 (NPN) & MJE15031 (PNP) Silicon Complementary Transistors High Frequenc y Driver for Audio Amplifier TO−220 T ype Package Description: The MJE15030 (NPN) and MJE15031 (PNP) are silicon co mplementary transistors in a TO−220 t ype case designed for use as a high fre quency driver in audio amplifier applic ations. Features: D DC Current Gain S pecified to 4A: hFE = = 40 20 Min M In @ @ IICC = = 3A 4A D Collector Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Band width Product: fT = 30MHz Min @ IC = 50 0mA Absolute Maximum Ratings: Collect or−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter−Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
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