MPSA55

Small Signal General Purpose Transistors (PNP) MPSA55/MPSA56 Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications RoHS Compliance Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram TO-92 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MPSA55 MPSA56 Unit VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous 60 80 60 80 4.0 500 V V V mA Power Dissipation at TA=25°C PD Derate above 25°C 625 mW 5.0 mW/° C Power Dissipation at TC=25°C PD Derate above 25°C 1.5 12 RθJA Thermal Resistance Junction to Ambient Air (Note) 200 RθJC Thermal Resistance Junction to Case 83.3 TJ ,TSTG Operation and Storage Junction Temperature Range -55 to +150 Note: RθJA is measured with the device soldered into a typical printed circuit board. W mW/° C ° C/W ° C/W °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH Page 1 of 4 Small Signal General Purpose Transistors (PNP) MPSA55/MPSA56 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description V(BR)CEO* Collector-Emitter Breakdown Voltage MPSA55 Min. Max. 60 - MPSA56 Min. Max. 80 - V(BR)EBO Emitter-Base Breakdown Voltage 4.0 - 4.0 - ICBO ICEO...