INFRARED LEDS PHOTO SENSORS
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipm...
Description
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission
TO−18 metal package High radiant intensity: IE = 20 mW/sr (typ.) Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible. Highly reliable due to hermetic seal
TLN108(F)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta > 25°C)
Pulse forward current
(Note 1)
Reverse voltage
Operating temperature range
Storage temperature range
IF
ΔIF / °C
IFP VR Topr Tstg
100
−1
1 5 −40~125 −55~150
mA
mA / °C
A V °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz
TOSHIBA
4−5Q2
Weight: 0.33 g (typ.)
Pin Connection
12
1. Anode 2. Cathode (case)
Markings
Product No. (TL omitted) Monthly lot number
...
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