TLN108F SENSORS Datasheet

TLN108F Datasheet, PDF, Equivalent


Part Number

TLN108F

Description

INFRARED LEDS PHOTO SENSORS

Manufacture

Toshiba

Total Page 5 Pages
Datasheet
Download TLN108F Datasheet


TLN108F
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free
OptoElectronic Switches
Tape And Card Readers
Equipment Using Infrared Transmission
TO18 metal package
High radiant intensity: IE = 20 mW/sr (typ.)
Excellent radiantintensity linearity. Modulation by pulse operation
and high frequency is possible.
Highly reliable due to hermetic seal
TLN108(F)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta > 25°C)
Pulse forward current
(Note 1)
Reverse voltage
Operating temperature range
Storage temperature range
IF
ΔIF / °C
IFP
VR
Topr
Tstg
100
1
1
5
40~125
55~150
mA
mA / °C
A
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width 100μs, repetitive frequency = 100 Hz
TOSHIBA
45Q2
Weight: 0.33 g (typ.)
Pin Connection
12
1. Anode
2. Cathode (case)
Markings
Product No. (TL omitted)
Monthly lot number
N108
Letter colorRed
Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufacture)
1 2007-10-01

TLN108F
TLN108(F)
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Pulse forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
VFP
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 50 mA
IFP = 1 A
VR = 5 V
IF = 50 mA
IF = 50 mA
VR = 0, f = 1 MHz
IF = 50 mA
IF = 50 mA
IF = 50 mA
Min Typ. Max Unit
1.3 1.4
V
2.4
V
― ― 10 μA
10 20 mW / sr
3 mW
30 pF
940
nm
50 nm
±8
°
Precautions
Please be careful of the followings.
1. Soldering temperature: 260°C max
Soldering time: 5s max
(Soldering must be performed 1.5m from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. Radiant intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
IE (t)
IE (0)
=
PO (t)
PO (0)
2 2007-10-01


Features TOSHIBA Infrared LED GaAs Infrared Emitt er TLN108(F) Lead(Pb)-Free Opto−Elect ronic Switches Tape And Card Readers Eq uipment Using Infrared Transmission • TO−18 metal package • High radiant intensity: IE = 20 mW/sr (typ.) • Ex cellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. • Highly relia ble due to hermetic seal TLN108(F) Uni t: mm Absolute Maximum Ratings (Ta = 2 5°C) Characteristic Symbol Rating Unit Forward current Forward current derating (Ta > 25°C) Pulse forward cu rrent (Note 1) Reverse voltage Opera ting temperature range Storage tempera ture range IF ΔIF / °C IFP VR Topr T stg 100 −1 1 5 −40~125 −55~150 mA mA / °C A V °C °C Note: Using co ntinuously under heavy loads (e.g. the application of high temperature/current /voltage and the significant change in temperature, etc.) may cause this produ ct to decrease in the reliability signi ficantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
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