LF411QML-SP Amplifier Datasheet

LF411QML-SP Datasheet, PDF, Equivalent


Part Number

LF411QML-SP

Description

Low Drift JFET Input Operational Amplifier

Manufacture

etcTI

Total Page 19 Pages
Datasheet
Download LF411QML-SP Datasheet


LF411QML-SP
LF411QML-SP
www.ti.com
SNOSAO6C – OCTOBER 2005 – REVISED MARCH 2013
LF411QML Low Offset, Low Drift JFET Input Operational Amplifier
Check for Samples: LF411QML-SP
FEATURES
1
23 Available with Radiation Specification
– ELDRS FREE 100 krad(Si)
• Internally Trimmed Offset Voltage: 0.5 mV(Typ)
• Input Offset Voltage Drift: 10 μV/°C
• Low Input Bias Current: 50 pA
• Low Input Noise Current: 0.01 pA/Hz
• Wide Gain Bandwidth: 3 MHz
• High Slew Rate: 10V/μs
• Low Supply Current: 1.8 mA
• High Input Impedance: 1012Ω
• Low Total Harmonic Distortion: AV = 10, RL =
10K, VO = 20VP-P, BW = 20Hz - 20KHz <0.02%
• Low 1/f Noise Corner: 50 Hz
• Fast Settling Time to 0.01%: 2 μs
DESCRIPTION
This device is a low cost, high speed, JFET input
operational amplifier with very low input offset voltage
and ensured input offset voltage drift. It requires low
supply current yet maintains a large gain bandwidth
product and fast slew rate. In addition, well matched
high voltage JFET input devices provide very low
input bias and offset currents. The LF411QML is pin
compatible with the standard LM741 allowing
designers to immediately upgrade the overall
performance of existing designs.
This amplifier may be used in applications such as
high speed integrators, fast D/A converters, sample
and hold circuits and many other circuits requiring low
input offset voltage and drift, low input bias current,
high input impedance, high slew rate and wide
bandwidth.
Connection Diagram
N/C
BALANCE
IN-
IN+
V-
1
2
3
4
5
10 N/C
9 N/C
8 V+
7 OUTPUT
6 BALANCE
Pin 4 connected to case.
Figure 1. SDIP Package
Figure 2. 10LD CLGA Package
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
BI-FET II is a trademark of dcl_owner.
2
All other trademarks are the property of their respective owners.
3
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated

LF411QML-SP
LF411QML-SP
SNOSAO6C – OCTOBER 2005 – REVISED MARCH 2013
Simplified Schematic
Detailed Schematic
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2 Submit Documentation Feedback
Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: LF411QML-SP


Features LF411QML-SP www.ti.com SNOSAO6C – OC TOBER 2005 – REVISED MARCH 2013 LF41 1QML Low Offset, Low Drift JFET Input O perational Amplifier Check for Samples: LF411QML-SP FEATURES 1 •23 Availabl e with Radiation Specification – ELDR S FREE 100 krad(Si) • Internally Trim med Offset Voltage: 0.5 mV(Typ) • Inp ut Offset Voltage Drift: 10 μV/°C • Low Input Bias Current: 50 pA • Low Input Noise Current: 0.01 pA/√Hz • Wide Gain Bandwidth: 3 MHz • High Sle w Rate: 10V/μs • Low Supply Current: 1.8 mA • High Input Impedance: 1012 • Low Total Harmonic Distortion: AV = 10, RL = 10KΩ, VO = 20VP-P, BW = 2 0Hz - 20KHz <0.02% • Low 1/f Noise Co rner: 50 Hz • Fast Settling Time to 0 .01%: 2 μs DESCRIPTION This device is a low cost, high speed, JFET input ope rational amplifier with very low input offset voltage and ensured input offset voltage drift. It requires low supply current yet maintains a large gain band width product and fast slew rate. In addition, well matched high voltage JFET input devices provide ve.
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