LM5109B-Q1 Driver Datasheet

LM5109B-Q1 Datasheet, PDF, Equivalent


Part Number

LM5109B-Q1

Description

High Voltage 1-A Peak Half-Bridge Gate Driver

Manufacture

etcTI

Total Page 22 Pages
Datasheet
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LM5109B-Q1
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LM5109B-Q1
SNVSAG6A – NOVEMBER 2015 – REVISED DECEMBER 2015
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver
1 Features
1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results
– Device Temperature Grade 1
– Device HBM ESD Classification Level 1C
– Device CDM ESD Classification Level C4A
• Drives Both a High-Side and Low-Side N-Channel
MOSFET
• 1-A Peak Output Current (1.0-A Sink/1.0-A
Source)
• Independent TTL/CMOS Compatible Inputs
• Bootstrap Supply Voltage to 108-V DC
• Fast Propagation Times (30 ns Typical)
• Drives 1000-pF Load with 15-ns Rise and Fall
Times
• Excellent Propagation Delay Matching (2 ns
Typical)
• Supply Rail Under-Voltage Lockout
• Low Power Consumption
• Thermally-Enhanced WSON-8 Package
3 Description
The LM5109B-Q1 is a cost effective, high voltage
gate driver designed to drive both the high-side and
the low-side N-Channel MOSFETs in a synchronous
buck or a half bridge configuration. The floating high-
side driver is capable of working with rail voltages up
to 90 V. The outputs are independently controlled
with TTL/CMOS compatible logic input thresholds.
The robust level shift technology operates at high
speed while consuming low power and providing
clean level transitions from the control input logic to
the high-side gate driver. Under-voltage lockout is
provided on both the low-side and the high-side
power rails. The device is available in the thermally
enhanced WSON(8) packages.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM5109B-Q1
WSON (8)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
• Push-Pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters
Simplified Application Diagram
VCC
RBoot
DBoot
VIN
VDD
HB
HO
HI LM5109 HS
LI LO
VSS
LOAD
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5109B-Q1
LM5109B-Q1
SNVSAG6A – NOVEMBER 2015 – REVISED DECEMBER 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings ............................................................ 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Typical Characteristics .............................................. 7
7 Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................... 9
7.4 HS Transient Voltages Below Ground .................... 10
7.5 Device Functional Modes........................................ 10
8 Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application ................................................. 11
9 Power Supply Recommendations...................... 16
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 Device and Documentation Support ................. 18
11.1 Community Resources.......................................... 18
11.2 Trademarks ........................................................... 18
11.3 Electrostatic Discharge Caution ............................ 18
11.4 Glossary ................................................................ 18
12 Mechanical, Packaging, and Orderable
Information ........................................................... 18
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (November 2015) to Revision A
Page
• Changed device from Product Preview to Production Data and released full data sheet...................................................... 1
2 Submit Documentation Feedback
Product Folder Links: LM5109B-Q1
Copyright © 2015, Texas Instruments Incorporated


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5109B-Q1 SNVSAG6A – NOVE MBER 2015 – REVISED DECEMBER 2015 LM5 109B-Q1 High Voltage 1-A Peak Half Brid ge Gate Driver 1 Features •1 Qualifi ed for Automotive Applications • AEC- Q100 Qualified With the Following Resul ts – Device Temperature Grade 1 – D evice HBM ESD Classification Level 1C Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low -Side N-Channel MOSFET • 1-A Peak Out put Current (1.0-A Sink/1.0-A Source) Independent TTL/CMOS Compatible Inpu ts • Bootstrap Supply Voltage to 108- V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load with 1 5-ns Rise and Fall Times • Excellent Propagation Delay Matching (2 ns Typica l) • Supply Rail Under-Voltage Lockou t • Low Power Consumption • Thermal ly-Enhanced WSON-8 Package 3 Descripti on The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs .
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