LM5109 Driver Datasheet

LM5109 Datasheet, PDF, Equivalent


Part Number

LM5109

Description

100V/1A Peak Half Bridge Gate Driver

Manufacture

etcTI

Total Page 16 Pages
Datasheet
Download LM5109 Datasheet


LM5109
NRND
LM5109
www.ti.com
SNVS369 – APRIL 2005
LM5109 100V/1A Peak Half Bridge Gate Driver
Check for Samples: LM5109
FEATURES
1
2 Drives Both a High Side and Low Side N-
Channel MOSFET
• 1A Peak Output Current (1.0A Sink / 1.0A
Source)
• Independent TTL Compatible Inputs
• Bootstrap Supply Voltage to 118V DC
• Fast Propagation Times (27 ns Typical)
• Drives 1000 pF Load with 15ns Rise and Fall
Times
• Excellent Propagation Delay Matching (2 ns
Typical)
• Supply Rail Under-voltage Lockout
• Low Power Consumption
• Pin Compatible with ISL6700
TYPICAL APPLICATIONS
• Current Fed Push-pull Converters
• Half and Full Bridge Power Converters
• Solid State Motor Drives
• Two Switch Forward Power Converters
PACKAGE
• SOIC-8
• WSON-8 (4 mm x 4 mm)
DESCRIPTION
The LM5109 is a low cost high voltage gate driver,
designed to drive both the high side and the low side
N-Channel MOSFETs in a synchronous buck or a
half bridge configuration. The floating high-side driver
is capable of working with rail voltages up to 100V.
The outputs are independently controlled with TTL
compatible input thresholds. A robust level shifter
technology operates at high speed while consuming
low power and providing clean level transitions from
the control input logic to the high side gate driver.
Under-voltage lockout is provided on both the low
side and the high side power rails. The device is
available in the SOIC-8 and the thermally enhanced
WSON-8 packages.
SIMPLIFIED BLOCK DIAGRAM
VDD
HV
HB
UVLO
LEVEL
SHIFT
HI
VDD
UVLO
LI
VSS
DRIVER
HO
HS
DRIVER
LO
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated

LM5109
LM5109
NRND
SNVS369 – APRIL 2005
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
CONNECTION DIAGRAMS
VDD
1
8 HB
HI 2
7 HO
SOIC-8
LI 3
6 HS
VSS 4
5 LO
Figure 1.
VDD
1
8 HB
HI 2
7 HO
WSON-8
LI 3
6 HS
VSS 4
5 LO
Table 1. PIN DESCRIPTION
Pin No.
SO-8
WSON-
8 (1)
11
22
33
44
55
66
77
88
Name
Description
VDD Positive gate drive supply
HI High side control input
LI Low side control input
VSS Ground reference
LO Low side gate driver output
HS High side source
connection
HO High side gate driver output
HB High side gate driver
positive supply rail
Application Information
Locally decouple to VSS using low ESR/ESL capacitor located as close to IC as
possible.
The LM5109 HI input is compatible with TTL input thresholds. Unused HI input
should be tied to ground and not left open
The LM5109 LI input is compatible with TTL input thresholds. Unused LI input
should be tied to ground and not left open.
All signals are referenced to this ground.
Connect to the gate of the low side N-MOS device.
Connect to the negative terminal of the bootstrap capacitor and to the source of
the high side N-MOS device.
Connect to the gate of the low side N-MOS device.
Connect the positive terminal of the bootstrap capacitor to HB and the negative
terminal of the bootstrap capacitor to HS. The bootstrap capacitor should be
placed as close to IC as possible.
(1) For WSON-8 package it is recommended that the exposed pad on the bottom of the LM5109 be soldered to ground plane on
the PCB board and the ground plane should extend out from underneath the package to improve heat dissipation.
2 Submit Documentation Feedback
Product Folder Links: LM5109
Copyright © 2005, Texas Instruments Incorporated


Features NRND LM5109 www.ti.com SNVS369 – AP RIL 2005 LM5109 100V/1A Peak Half Brid ge Gate Driver Check for Samples: LM510 9 FEATURES 1 •2 Drives Both a High S ide and Low Side NChannel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load wit h 15ns Rise and Fall Times • Excellen t Propagation Delay Matching (2 ns Typi cal) • Supply Rail Under-voltage Lock out • Low Power Consumption • Pin C ompatible with ISL6700 TYPICAL APPLICAT IONS • Current Fed Push-pull Converte rs • Half and Full Bridge Power Conve rters • Solid State Motor Drives • Two Switch Forward Power Converters PA CKAGE • SOIC-8 • WSON-8 (4 mm x 4 m m) DESCRIPTION The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low si de N-Channel MOSFETs in a synchronous b uck or a half bridge configuration. The floating high-side driver is capable of working with rail.
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