SN74LVC2G241 Driver Datasheet

SN74LVC2G241 Datasheet, PDF, Equivalent


Part Number

SN74LVC2G241

Description

Dual Buffer Driver

Manufacture

etcTI

Total Page 23 Pages
Datasheet
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SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
SN74LVC2G241 Dual Buffer and Driver With 3-State Outputs
1 Features
1 Available in the Texas Instruments
NanoFree™ Package
• Supports 5-V VCC Operation
• Inputs Accept Voltages to 5.5 V
• Max tpd of 4.1 ns at 3.3 V
• Low Power Consumption, 10-µA Maximum ICC
• ±24-mA Output Drive at 3.3 V
• Typical VOLP (Output Ground Bounce)
<0.8 V at VCC = 3.3 V, TA = 25°C
• Typical VOHV (Output VOH Undershoot)
>2 V at VCC = 3.3 V, TA = 25°C
• Ioff Supports Live Insertion, Partial-Power-Down
Mode, and Back-Drive Protection
• Can Be Used as a Down Translator to Translate
Inputs From a Max of 5.5 V Down
to the VCC Level
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
2 Applications
• AV Receivers
• Blu-ray Players and Home Theaters
• DVD Recorders and Players
• Desktop or Notebook PCs
• Digital Radio or Internet Radio Players
• Digital Video Cameras (DVC)
• Embedded PCs
• GPS: Personal Navigation Devices
• Mobile Internet Devices
• Network Projector Front-Ends
• Portable Media Players
• Pro Audio Mixers
3 Description
This dual buffer and line driver is designed for 1.65-V
to 5.5-V VCC operation.
The SN74LVC2G241 device is designed specifically
to improve both the performance and density of 3-
state memory-address drivers, clock drivers, and bus-
oriented receivers and transmitters.
NanoFree package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.
The SN74LVC2G241 device is organized as two 1-bit
line drivers with separate output-enable (1OE, 2OE)
inputs. When 1OE is low and 2OE is high, the device
passes data from the A inputs to the Y outputs. When
1OE is high and 2OE is low, the outputs are in the
high-impedance state.
To ensure the high-impedance state during power up
or power down, OE should be tied to VCC through a
pullup resistor, and OE should be tied to GND
through a pulldown resistor; the minimum value of the
resistor is determined by the current-sinking or the
current-sourcing capability of the driver.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current backflow
through the device when it is powered down.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
SN74LVC2G241DCT SM8 (8)
2.95 mm × 2.80 mm
SN74LVC2G241DCU VSOOP (8)
2.30 mm × 2.00 mm
SN74LVC2G241YZP DSBGA (8)
1.91 mm × 0.91 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
1
1OE
2
1A
6
1Y
2OE
2A
7
5
3
2Y
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

SN74LVC2G241
SN74LVC2G241
SCES210P – APRIL 1999 – REVISED JANUARY 2019
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ..................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions ...................... 4
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Operating Characteristics.......................................... 6
6.8 Typical Characteristic................................................ 6
7 Parameter Measurement Information .................. 7
8 Detailed Description .............................................. 8
8.1 Overview ................................................................... 8
8.2 Functional Block Diagram ......................................... 8
8.3 Feature Description................................................... 8
8.4 Device Functional Modes.......................................... 8
9 Application and Implementation .......................... 9
9.1 Application Information.............................................. 9
9.2 Typical Application ................................................... 9
10 Power Supply Recommendations ..................... 10
11 Layout................................................................... 10
11.1 Layout Guidelines ................................................. 10
11.2 Layout Example .................................................... 10
12 Device and Documentation Support ................. 11
12.1 Documentation Support ........................................ 11
12.2 Community Resources.......................................... 11
12.3 Trademarks ........................................................... 11
12.4 Electrostatic Discharge Caution ............................ 11
12.5 Glossary ................................................................ 11
13 Mechanical, Packaging, and Orderable
Information ........................................................... 11
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision O (December 2015) to Revision P
Page
• Changed Electrical Characteristics table format ................................................................................................................... 5
• Changed Switching Characteristics tables format. ................................................................................................................ 6
Changes from Revision N (November 2013) to Revision O
Page
• Added Applications section, Device Information table, ESD Ratings table, Thermal Information table, Typical
Characteristics, Feature Description section, Device Functional Modes, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
Changes from Revision M (February 2007) to Revision N
Page
• Updated document to new TI data sheet format. ................................................................................................................... 1
• Removed Ordering Information table. .................................................................................................................................... 1
• Updated Features. .................................................................................................................................................................. 1
• Updated operating temperature range. .................................................................................................................................. 4
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Copyright © 1999–2019, Texas Instruments Incorporated
Product Folder Links: SN74LVC2G241


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity SN74LVC2G241 SCES210P – APRIL 1999 – REVISED JANUARY 2019 SN74LVC2 G241 Dual Buffer and Driver With 3-Stat e Outputs 1 Features •1 Available in the Texas Instruments NanoFree™ Pack age • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 4.1 ns at 3.3 V • Low Power C onsumption, 10-µA Maximum ICC • ±24 -mA Output Drive at 3.3 V • Typical V OLP (Output Ground Bounce) <0.8 V at VC C = 3.3 V, TA = 25°C • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3 .3 V, TA = 25°C • Ioff Supports Live Insertion, Partial-Power-Down Mode, an d Back-Drive Protection • Can Be Used as a Down Translator to Translate Inpu ts From a Max of 5.5 V Down to the VCC Level • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Pr otection Exceeds JESD 22 – 2000-V Hum an-Body Model (A114-A) – 200-V Machin e Model (A115-A) – 1000-V Charged-Device Model (C101) 2 Applications • AV Receivers • Blu-ray Players.
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