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BTD882ST3 Dataheets PDF



Part Number BTD882ST3
Manufacturers CYStech
Logo CYStech
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet BTD882ST3 DatasheetBTD882ST3 Datasheet (PDF)

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882ST3 BVCEO IC RCESAT(typ) Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 1/7 30V 3A 150mΩ Features  Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A  Excellent current gain characteristics  Complementary to BTB772ST3  Pb-free lead plating package Symbol BTD882ST3 Outline TO-126 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD882ST3-X-BL-X Package TO-126 (Pb-free.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882ST3 BVCEO IC RCESAT(typ) Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 1/7 30V 3A 150mΩ Features  Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A  Excellent current gain characteristics  Complementary to BTB772ST3  Pb-free lead plating package Symbol BTD882ST3 Outline TO-126 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD882ST3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD882ST3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 60 30 6 3 7 *1 1 10 -55~+150 Unit V V V A A W C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 60 30 6 160 180 150 - Typ. 0.3 0.15 270 16 Max. 100 100 0.5 0.25 1.5 390 - Unit V V V nA nA V Ω V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.5A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width 300μs, Duty Cycle2% Classification Of hFE 2 Rank Range P 180~390 BTD882ST3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 3/7 Collector Current---IC(A) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 Emitter Grounded Output Characteristics 1mA 500uA 400uA 300uA 200uA IB=100uA 1 2 34 5 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Emitter Grounded Output Characteristics 5mA 2.5mA 2mA 1.5mA 1mA IB=500uA 12345 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) Emitter Grounded Output Characteristics 20mA 3 10mA 2 6mA 4mA 1 IB=2mA 0 0 1 2 34 5 Collector-to-Emitter Voltage---VCE(V) 6 Collector Current---IC(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 Emitter Grounded Output Characteristics 50mA 20mA 10mA IB=5mA 12 3 45 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 1000 125℃ Current Gain vs Collector Current 1000 125℃ Current Gain---HFE Current Gain---HFE 100 75℃ 25℃ 10 10 VCE=1V 100 1000 Collector Current---IC(mA) 100 75℃ 25℃ 10000 VCE=2V 10 10 100 1000 Collector Current---IC(mA) 10000 BTD882ST3 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 4/7 Current Gain vs Collector Current 1000 125℃ Saturation Voltage vs Collector Current 1000 VCESAT=10IB 100 Saturation Voltage---(mV) Current Gain---HFE Saturation Voltage---(mV) 75℃ VCE=5V 25℃ 100 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 VCESAT=50IB 25℃ 10 75°C 125°C 10000 1 1 10 100 1000 Collector Current---IC(mA) 10000 10000 Saturation Voltage vs Collector Current VCESAT=100IB Saturation Voltage---(mV) 100 10 1 1000 25℃ 75°C 125°C 10 100 1000 Collector Current---IC(mA) 10000 100 10 1 10000 Saturation Voltage vs Collector Current VBESAT=50IB 1000 1000 25℃ 100 25℃ 75°C 125°C 10 100 1000 Collector Current---IC(mA) 10000 Capacitance vs Reverse-biased Voltage Cib Capacitance---(pF) 100 1 125℃ 75℃ 10 100 1000 Collector Current---IC(mA) 10000 10 0.1 Cob 1 10 Reverse-biased Voltage---(V) 100 Saturation Voltage---(mV) BTD882ST3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 5/7 Typical Characteristics(Cont.) Cutoff Frequency vs Collector Current 1000 10000 On Voltage vs Collector Current VCE=2V 25℃ 75℃ 100 FT@VCE=5V 1000 On Voltage---(mV) Cutoff Frequency---FT(MHZ) Power Dissipation---PD(W) 10 1 10 100 Collector Current --- IC(mA) 1000 Power Derating Curve 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃) Power Dissipation---PD(W) 100 1 12 10 8 6 4 2 0 0 125℃ 10 100 1000 Collector Current---IC(mA) Power Derating Curve 10000 50 100 150 Case Temperature---TC(℃) 200 BTD882ST3 CYStek Product Specification CYStech Electronics Cor.


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