Document
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882ST3
BVCEO IC RCESAT(typ)
Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 1/7
30V 3A 150mΩ
Features
Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package
Symbol
BTD882ST3
Outline
TO-126
B:Base C:Collector E:Emitter
ECB
Ordering Information
Device BTD882ST3-X-BL-X
Package
TO-126 (Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD882ST3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg
Limit
60 30 6 3 7 *1 1 10 -55~+150
Unit
V V V A A
W
C
Characteristics (Ta=25C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *RCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob
Min.
60 30 6 160 180 150 -
Typ.
0.3 0.15 270 16
Max.
100 100 0.5 0.25 1.5 390 -
Unit
V V V nA nA V Ω
V MHz pF
Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=5V, IC=0.5A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification Of hFE 2
Rank Range
P 180~390
BTD882ST3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 3/7
Collector Current---IC(A)
0.35 0.3 0.25 0.2 0.15 0.1 0.05
0 0
Emitter Grounded Output Characteristics
1mA
500uA
400uA 300uA 200uA IB=100uA
1 2 34 5 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
Emitter Grounded Output Characteristics
5mA
2.5mA 2mA 1.5mA 1mA
IB=500uA
12345 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
Emitter Grounded Output Characteristics
20mA 3
10mA
2 6mA
4mA 1
IB=2mA
0 0 1 2 34 5 Collector-to-Emitter Voltage---VCE(V)
6
Collector Current---IC(A)
4.5 4
3.5 3
2.5 2
1.5 1
0.5 0 0
Emitter Grounded Output Characteristics
50mA
20mA 10mA
IB=5mA
12 3 45 Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
125℃
Current Gain vs Collector Current
1000
125℃
Current Gain---HFE
Current Gain---HFE
100 75℃
25℃
10 10
VCE=1V
100 1000 Collector Current---IC(mA)
100 75℃
25℃
10000
VCE=2V
10 10
100 1000 Collector Current---IC(mA)
10000
BTD882ST3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 4/7
Current Gain vs Collector Current 1000
125℃
Saturation Voltage vs Collector Current 1000
VCESAT=10IB
100
Saturation Voltage---(mV)
Current Gain---HFE
Saturation Voltage---(mV)
75℃
VCE=5V
25℃
100 10
100 1000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current 1000
VCESAT=50IB
25℃ 10 75°C
125°C
10000
1 1
10 100 1000 Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VCESAT=100IB
Saturation Voltage---(mV)
100
10 1
1000
25℃ 75°C 125°C
10 100 1000 Collector Current---IC(mA)
10000
100
10 1
10000
Saturation Voltage vs Collector Current
VBESAT=50IB
1000
1000
25℃
100
25℃ 75°C 125°C
10 100 1000 Collector Current---IC(mA)
10000
Capacitance vs Reverse-biased Voltage
Cib
Capacitance---(pF)
100 1
125℃ 75℃
10 100 1000 Collector Current---IC(mA)
10000
10 0.1
Cob
1 10 Reverse-biased Voltage---(V)
100
Saturation Voltage---(mV)
BTD882ST3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C858T3 Issued Date : 2011.06.28 Revised Date : 2016.01.12 Page No. : 5/7
Typical Characteristics(Cont.)
Cutoff Frequency vs Collector Current 1000
10000
On Voltage vs Collector Current
VCE=2V
25℃ 75℃
100
FT@VCE=5V
1000
On Voltage---(mV)
Cutoff Frequency---FT(MHZ)
Power Dissipation---PD(W)
10 1
10 100 Collector Current --- IC(mA)
1000
Power Derating Curve 1.2
1
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
100 1
12 10 8 6 4 2 0
0
125℃
10 100 1000 Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150 Case Temperature---TC(℃)
200
BTD882ST3
CYStek Product Specification
CYStech Electronics Cor.