BTD882ST3 Transistor Datasheet

BTD882ST3 Datasheet, PDF, Equivalent


Part Number

BTD882ST3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD882ST3 Datasheet


BTD882ST3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882ST3
BVCEO
IC
RCESAT(typ)
Spec. No. : C858T3
Issued Date : 2011.06.28
Revised Date : 2016.01.12
Page No. : 1/7
30V
3A
150mΩ
Features
Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A
Excellent current gain characteristics
Complementary to BTB772ST3
Pb-free lead plating package
Symbol
BTD882ST3
Outline
TO-126
BBase
CCollector
EEmitter
ECB
Ordering Information
Device
BTD882ST3-X-BL-X
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 3,000 pcs/box ,
30,000 pcs/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, BL: bulk, 200 pcs/bag, 15 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTD882ST3
CYStek Product Specification

BTD882ST3
CYStech Electronics Corp.
Spec. No. : C858T3
Issued Date : 2011.06.28
Revised Date : 2016.01.12
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw350μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25)
Pd(Tc=25)
Tj ; Tstg
Limit
60
30
6
3
7 *1
1
10
-55~+150
Unit
V
V
V
A
A
W
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
60
30
6
-
-
-
-
-
160
180
150
-
-
Typ.
-
-
-
-
-
0.3
0.15
-
-
-
-
270
16
Max.
-
-
-
100
100
0.5
0.25
1.5
-
390
-
-
-
Unit
V
V
V
nA
nA
V
Ω
V
-
-
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=5V, IC=0.5A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification Of hFE 2
Rank
Range
P
180~390
BTD882ST3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NP N Epitaxial Planar Transistor BTD882ST3 BVCEO IC RCESAT(typ) Spec. No. : C85 8T3 Issued Date : 2011.06.28 Revised Da te : 2016.01.12 Page No. : 1/7 30V 3A 1 50mΩ Features  Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A  Excelle nt current gain characteristics  Com plementary to BTB772ST3  Pb-free lea d plating package Symbol BTD882ST3 Out line TO-126 B:Base C:Collector E Emitter ECB Ordering Information De vice BTD882ST3-X-BL-X Package TO-126 ( Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ cts Packing spec, BL: bulk, 200 pcs/bag , 15 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTD882ST3 CYStek Product Specif ication CYStech Electronics Corp. Spe c. No. : C858T3 Issued Date : 2011.06.2 8 Revised Date : 2016.01.12 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C).
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