BTN1053A3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 1/7 Features Excellent HFE Characteristics up to 1A Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA 5A peak pulse current Pb-free lead plating and halogen-free package Symbol BTN1053A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tstg BTN1053A3 Limit 150 80 6 2 5 (Note) 750 -55~+150 -55~+150 Unit V V V A A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 * VCE(sat) 2 * VCE(sat) 3 * VCE(sat) 4 * VCE(sat) 5 * VBE(sat) * VBE(on) * hFE 1 * hFE 2 * hFE 3 * hFE 4 * fT Cob Min. 150 80 6 300 300 120 30 - Typ. 250 110 7.4 25 65 200 100 190 0.83 0.92 140 23 Max. 100 100 40 150 400 250 300 1.2 1.2 820 - Unit V V V nA nA mV mV mV mV mV V V MHz pF Test Conditions IC=100μA IC=10mA IE=10μA VCB=150V VEB=6V IC=200mA, IB=20mA IC=500mA, IB=20mA IC=1A, IB=10mA IC=1A, IB=50mA IC=2A, IB=100mA IC=1A, IB=50mA VCE=2V, IC=3A VCE=2V, IC=10mA...