BTN1053A3 Transistor Datasheet

BTN1053A3 Datasheet, PDF, Equivalent


Part Number

BTN1053A3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTN1053A3 Datasheet


BTN1053A3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTN1053A3
Spec. No. : C818A3
Issued Date : 2013.05.22
Revised Date : 2013.06.25
Page No. : 1/7
Features
Excellent HFE Characteristics up to 1A
Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA
5A peak pulse current
Pb-free lead plating and halogen-free package
Symbol
BTN1053A3
Outline
TO-92
BBase
CCollector
EEmitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw350μs,Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd
Tj
Tstg
BTN1053A3
Limit
150
80
6
2
5 (Note)
750
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
CYStek Product Specification

BTN1053A3
CYStech Electronics Corp.
Spec. No. : C818A3
Issued Date : 2013.05.22
Revised Date : 2013.06.25
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VCE(sat) 5 *
VBE(sat) *
VBE(on) *
hFE 1 *
hFE 2 *
hFE 3 *
hFE 4 *
fT
Cob
Min.
150
80
6
-
-
-
-
-
-
-
-
-
300
300
120
30
-
-
Typ.
250
110
7.4
-
-
25
65
200
100
190
0.83
0.92
-
-
-
-
140
23
Max.
-
-
-
100
100
40
150
400
250
300
1.2
1.2
-
820
-
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=10mA
IE=10μA
VCB=150V
VEB=6V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=1A, IB=50mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTN1053A3-0-BK-G
BTN1053A3-0-TB-G
Package
TO-92
(Pb-free lead plating and halogen-free
package)
Shipping
1000 pcs/ bag, 10 bags/box, 10boxes/carton
2000 pcs / Tape & Box
BTN1053A3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Spec. No. : C818A3 Issued Date : 2013. 05.22 Revised Date : 2013.06.25 Page No . : 1/7 Features • Excellent HFE Cha racteristics up to 1A • Low Saturatio n Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB =50mA • 5A peak pulse current • Pb- free lead plating and halogen-free pack age Symbol BTN1053A3 Outline TO-92 B :Base C:Collector E:Emitter ECB Absolute Maximum Ratings (Ta=25°C) Pa rameter Collector-Base Voltage Collecto r-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Ope rating Junction Temperature Range Stora ge Temperature Range Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VC BO VCEO VEBO IC(DC) IC(Pulse) Pd Tj Tst g BTN1053A3 Limit 150 80 6 2 5 (Note) 750 -55~+150 -55~+150 Unit V V V A A mW °C °C CYStek Product Specificatio n CYStech Electronics Corp. Spec. No. : C818A3 Issued Date : 2013.05.22 Revi sed Date : 2013.06.25 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO B.
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