INA333-HT Amplifier Datasheet

INA333-HT Datasheet, PDF, Equivalent


Part Number

INA333-HT

Description

Rail-to-Rail Out Instrumentation Amplifier

Manufacture

etcTI

Total Page 26 Pages
Datasheet
Download INA333-HT Datasheet


INA333-HT
INA333-HT
www.ti.com
SBOS514C – MARCH 2010 – REVISED OCTOBER 2013
Micro-Power, Zerø-Drift, Rail-to-Rail Out
Instrumentation Amplifier
Check for Samples: INA333-HT
FEATURES
1
2 Low Offset Voltage: 25 μV (max at 25°C),
G 100
• Low Drift: 0.2 μV/°C, G 1000
• Low Noise: 55 nV/Hz, G 100
• High CMRR: 100 dB (min at 25°C), G 10
• Supply Range: +1.8 V to +5.5 V
• Input Voltage: (V–) +0.1 V to (V+) –0.1 V
• Output Range: (V–) +0.05 V to (V+) –0.05V
• Low Quiescent Current: 198 μA
• RFI Filtered Inputs
APPLICATIONS
• Down-Hole Drilling
• High Temperature Environments
SUPPORTS EXTREME TEMPERATURE
APPLICATIONS
• Controlled Baseline
• One Assembly/Test Site
• One Fabrication Site
• Available in Extreme (–55°C/210°C)
Temperature Range (1)
• Extended Product Life Cycle
• Extended Product-Change Notification
• Product Traceability
• Texas Instruments' high temperature products
utilize highly optimized silicon (die) solutions
with design and process enhancements to
maximize performance over extended
temperatures.
(1) Custom temperature ranges available
DESCRIPTION
The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op
amp design, small size, and low power make it ideal for a wide range of portable applications.
A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain
equation: G = 1 + (100k/RG).
The INA333 provides very low offset voltage (25 μV at 25°C, G 100), excellent offset voltage drift (0.2 μV/°C,
G 100), and high common-mode rejection (100 dB at 25°C, G 10). It operates with power supplies as low as
1.8 V (±0.9V), and quiescent current is only 50 μA—ideal for battery-operated systems. Using autocalibration
techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers
exceptionally low noise density (55 nV/Hz) that extends down to dc.
The INA333 is is specified over the TA = –55°C to +210°C temperature range.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2013, Texas Instruments Incorporated

INA333-HT
INA333-HT
SBOS514C – MARCH 2010 – REVISED OCTOBER 2013
2
VIN-
1
RG
8
RFI Filtered Inputs
RFI Filtered Inputs
50kW
50kW
V+
7
150kW
A1
150kW
A3 6 VOUT
www.ti.com
3
VIN+
RFI Filtered Inputs
RFI Filtered Inputs
A2
150kW
150kW
5 REF
INA333
4
V-
100kW
G=1+
RG
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
TA
–55°C to 210°C
PACKAGE (2)
KGD
JD
HKJ
HKQ
ORDERING INFORMATION(1)
ORDERABLE PART
NUMBER
TOP-SIDE MARKING
INA333SKGD1
NA
INA333SKGD2
NA
INA333SJD
INA333SJD
INA333SHKJ
INA333SHKJ
INA333SHKQ
INA333SHKQ
PACKAGE QTY | CARRIER
240 | TRAY
10 | TRAY
1 | TUBE
1 | TUBE
1 | TUBE
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, standard packaging quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/packaging.
ABSOLUTE MAXIMUM RATINGS(1)
Supply voltage
Analog input voltage range(2)
Output short-circuit(3)
Operating temperature range, TA
Storage temperature range, TSTG
Junction temperature, TJ
Human body model (HBM)
ESD rating
Charged device model (CDM)
Machine model (MM)
INA333
+7
(V–) – 0.3 to (V+) + 0.3
Continuous
–55 to +210
–65 to +210
+210
4000
1000
200
UNIT
V
V
°C
°C
°C
V
V
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3V beyond the supply rails should
be current limited to 10mA or less.
(3) Short-circuit to ground.
2 Submit Documentation Feedback
Product Folder Links: INA333-HT
Copyright © 2010–2013, Texas Instruments Incorporated


Features INA333-HT www.ti.com SBOS514C – MARC H 2010 – REVISED OCTOBER 2013 Micro- Power, Zerø-Drift, Rail-to-Rail Out In strumentation Amplifier Check for Samp les: INA333-HT FEATURES 1 •2 Low Off set Voltage: 25 μV (max at 25°C), G 100 • Low Drift: 0.2 μV/°C, G 1000 • Low Noise: 55 nV/√Hz, G 100 • High CMRR: 100 dB (min at 25 C), G ≥ 10 • Supply Range: +1.8 V to +5.5 V • Input Voltage: (V–) +0. 1 V to (V+) –0.1 V • Output Range: (V–) +0.05 V to (V+) –0.05V • Low Quiescent Current: 198 μA • RFI Fil tered Inputs APPLICATIONS • Down-Hole Drilling • High Temperature Environm ents SUPPORTS EXTREME TEMPERATURE APPL ICATIONS • Controlled Baseline • On e Assembly/Test Site • One Fabricatio n Site • Available in Extreme (–55 C/210°C) Temperature Range (1) • Ex tended Product Life Cycle • Extended Product-Change Notification • Product Traceability • Texas Instruments' hi gh temperature products utilize highly optimized silicon (die) solutions with design and process enhancements to maximize performance .
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