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SN74AUC2G125 DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS
SCES532D – DECEMBER 2003 – REVISED AUGUST 2007
FEATURES
• Available in the Texas Instruments NanoFree™ Package
• Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
• Ioff Supports Partial-Power-Down Mode Operation
• Sub-1-V Operable
• Max tpd of 1.8 ns at 1.8 V
• Low Power Consumption, 10 μA at 1.8 V • ±8-mA Output Drive at 1.8 V • Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II • ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
DCT PACKAGE (TOP VIEW)
DCU PACKAGE (TOP VIEW)
YZP PACKAGE (BOTTOM VIEW)
1OE 1A 2Y
1 2 3
8 VCC 7 2OE 6 1Y
1OE 1A 2Y
GND
1 2 3 4
8 VCC 7 2OE 6 1Y
5 2A
GND 4 5 2A 2Y 3 6 1Y 1A 2 7 2OE
1OE 1 8 VCC
GND
4
5 2A
See mechanical drawings for dimensions.
DESCRIPTION/ORDERING INFORMATION
This dual bus buffer gate is operational at 0.8-V to 2.7-V VCC, but is designed specifically for 1.65-V to 1.95-V VCC operation.
The SN74AUC2G125 features dual line drivers with 3-state outputs. The outputs are disabled when the associated output-enable (OE) input is high.
NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
TA –40°C to 85°C
ORDERING INFORMATION
PACKAGE (1) (2)
ORDERABLE PART NUMBER
NanoFree™ – WCSP (DSBGA) 0.23-mm Large Bump – YZP (Pb-free)
Reel of 3000
SN74AUC2G125YZPR
SSOP – DCT
Reel of 3000 SN74AUC2G125DCTR
VSSOP – DCU
Reel of 3000 SN74AUC2G125DCUR
TOP-SIDE MARKING(3) _ _ _UM_ U25_ _ _ U25_
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com. (3) DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.
DCU: The actual top-side marking has one additional character that designates the assembly/test site. YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2003–2007, Texas Instruments Incorporated
SN74AUC2G125 DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS
SCES532D – DECEMBER 2003 – REVISED AUGUST 2007
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DESCRIPTION/ORDERING INFORMATION (CONTINUED)
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
For more information about AUC Little Logic devices, please refer to the TI application report, Applications of Texas Instruments AUC Sub-1-V Little Logic Devices, literature number SCEA027.
FUNCTION TABLE (EACH BUFFER)
INPUTS OE A LH LL HX
OUTPUT Y
H L Z
LOGIC DIAGRAM (POSITIVE LOGIC)
1 1OE
2 1A
6 1Y
7 2OE
5 2A
3 2Y
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SN74AUC2G125 DUAL BUS BUFFER GATE WITH 3-STATE OUTPUTS
SCES532D – DECEMBER 2003 – REVISED AUGUST 2007
Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)
VCC Supply voltage range VI Input voltage range(2) VO Voltage range applied to any output in the high-impedance or power-off state(2) VO Output voltage range(2)
IIK Input clamp current
VI < 0
IOK Output clamp current
VO < 0
IO Continuous output current
Continuous current through VCC or GND
DCT package
θJA Package thermal impedance(3)
DCU package
YZP package
Tstg Storage temperature range
MIN –0.5 –0.5 –0.5 –0.5
–65
MAX 3.6 3.6 3.6
VCC + 0.5 –50 –50 ±20
±100 220 227 102 150
UNIT V V V V mA mA mA mA
°C/W
°C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated condition.