BTN853L3 Transistor Datasheet

BTN853L3 Datasheet, PDF, Equivalent


Part Number

BTN853L3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTN853L3 Datasheet


BTN853L3
CYStech Electronics Corp.
Spec. No. : C821L3
Issued Date : 2010.02.05
Revised Date : 2017.08.21
Page No. : 1/8
Low Vcesat NPN Epitaxial Planar Transistor
BTN853L3
BVCEO
ID
RCESAT(max)
60V
5.2A
55mΩ
Features
Extremely low equivalent on resistance; RCE(SAT)60mat 5.2A
5.2A continuous collector current (10.4A peak)
Very low saturation voltages
Excellent gain characteristics
Pb-free lead plating and halogen-free package
Symbol
BTN853L3
BBase
CCollector
EEmitter
Outline
SOT-223
C
E
C
B
Ordering Information
Device
BTN853L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTN853L3
CYStek Product Specification

BTN853L3
CYStech Electronics Corp.
Spec. No. : C821L3
Issued Date : 2010.02.05
Revised Date : 2017.08.21
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Power Dissipation @ TA=25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
Ptot
Tj
Tstg
Limits
60
60
6
5.2
10.2 (Note 1)
2
4
0.7 (Note 2)
1.7 (Note 3)
2 (Note 4)
-55~+150
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
179 (Note 2)
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
74 (Note 3)
63 (Note 4)
Thermal Resistance, Junction-to-solder point, max
Rth,j-sp
15
Note : 1. Single Pulse , Pw300μs, Duty2%.
2.Device mounted on an FR4 PCB, single-sided copper, tin plated and standard footprint.
3.Device mounted on an FR4 PCB, single-sided copper, tin plated, mounting pad for collector 6 cm².
4.Device mounted on a ceramic PCB, Al2O3, standard footprint.
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VCE(sat) 6
*VCE(sat) 7
*VCE(sat) 8
Min.
60
60
6
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
25
50
95
120
160
150
230
210
BTN853L3
Max.
-
-
-
50
50
35
70
120
150
220
210
305
280
Unit Test Conditions
V IC=100μA, IE=0
V IC=10mA, IB=0
V IC=100μA, IC=0
nA VCB=60V, IE=0
nA VEB=6V, IC=0
mV IC=500mA, IB=50mA
mV IC=1A, IB=50mA
mV IC=1A, IB=10mA
mV IC=2A, IB=40mA
mV IC=4A, IB=200mA
mV IC=4A, IB=400mA
mV IC=4A, IB=80mA
mV IC=5.2A, IB=260mA
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 821L3 Issued Date : 2010.02.05 Revised Date : 2017.08.21 Page No. : 1/8 Low V cesat NPN Epitaxial Planar Transistor B TN853L3 BVCEO ID RCESAT(max) 60V 5.2A 55mΩ Features • Extremely low equi valent on resistance; RCE(SAT)≤ 60m at 5.2A • 5.2A continuous collector current (10.4A peak) • Very low satu ration voltages • Excellent gain char acteristics • Pb-free lead plating an d halogen-free package Symbol BTN853L 3 B:Base C:Collector E:Emitter Outline SOT-223 C E C B Ordering Infor mation Device BTN853L3-0-T3-G Package SOT-223 (Pb-free lead plating and halo gen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound prod ucts Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTN 853L3 CYStek Product Specification CY Stech Electronics Corp. Spec. No. : C821L3 Issued Date : 2010.02.05 Revised Date : 20.
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