BTNA29A3 Transistor Datasheet

BTNA29A3 Datasheet, PDF, Equivalent


Part Number

BTNA29A3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTNA29A3 Datasheet


BTNA29A3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTNA29A3
Spec. No. : C145A3
Issued Date : 2017.03.28
Revised Date :
Page No. : 1/8
Description
The BTNA29A3 is a darlington amplifier transistor
Pb-free lead plating and halogen-free package
Symbol
BTNA29A3
C
Outline
TO-92
B
BBase
CCollector
EEmitter
E
EBC
Ordering Information
Device
BTNA29A3-0-TB-G
BTNA29A3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTNA29A3
CYStek Product Specification

BTNA29A3
CYStech Electronics Corp.
Spec. No. : C145A3
Issued Date : 2017.03.28
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCES
VEBO
IC
PD
Tj
Tstg
Limits
100
100
12
0.5
625
-55~+150
-55~+150
Unit
V
V
V
A
mW
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation
is not implied, damage may occur and reliability may be affected.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
83.3
200
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
100
100
12
-
-
-
-
-
-
10K
10K
125
-
Typ.
-
-
-
-
-
-
0.71
0.84
1.35
-
-
200
5
Max.
-
-
-
100
500
100
1.2
1.5
2.0
-
-
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=100μA, VBE=0V
IE=10μA
VCB=80V
VCE=80V
VEB=10V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=100MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
BTNA29A3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTNA2 9A3 Spec. No. : C145A3 Issued Date : 2 017.03.28 Revised Date : Page No. : 1/8 Description • The BTNA29A3 is a dar lington amplifier transistor • Pb-fre e lead plating and halogen-free package Symbol BTNA29A3 C Outline TO-92 B B:Base C:Collector E:Emitter E EBC Ordering Information Device BTNA 29A3-0-TB-G BTNA29A3-0-BK-G Package TO -92 (Pb-free lead plating and halogen-f ree package) TO-92 (Pb-free lead platin g and halogen-free package) Shipping 2 000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment f riendly grade : S for RoHS compliant pr oducts, G for RoHS compliant and green compound products Packing spec, TB :200 0 pcs/tape & box; BK: 1000 pcs / bag, 1 0 bags/box, 10 boxes/carton Product ran k, zero for no rank products Product na me BTNA29A3 CYStek Product Specificat ion CYStech Electronics Corp. Spec. N o. : C145A3 Issued Date : 2017.03.28 Revised Date : Page No. : 2/8 Absol.
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