BTNA45A3 Transistor Datasheet

BTNA45A3 Datasheet, PDF, Equivalent


Part Number

BTNA45A3

Description

NPN High Voltage Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTNA45A3 Datasheet


BTNA45A3
CYStech Electronics Corp.
NPN High Voltage Planar Transistor
BTNA45A3
BVCEO
IC
VCESAT
Spec. No. : C241A3
Issued Date : 2011.06.10
Revised Date : 2013.11.22
Page No. : 1/7
500V
150mA
150mV (max)
Description
High breakdown voltage. (BVCEO=500V)
Low collector-emitter saturation voltage VCESAT.
High collector current capability IC and ICM.
High collector current gain HFE at high collector current IC.
Low collector output capacitance. (Typ. 5pF at VCB =20V)
Pb-free lead plating and halogen-free package.
Symbol
BTNA45A3
Outline
TO-92
BBase
CCollector
EEmitter
E BC
Ordering Information
Device
BTNA45A3-0-TB-G
BTNA45A3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTNA45A3
CYStek Product Specification

BTNA45A3
CYStech Electronics Corp.
Spec. No. : C241A3
Issued Date : 2011.06.10
Revised Date : 2013.11.22
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current, single pulse, pulse width<1ms
Peak Base Current, single pulse, pulse width<1ms
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
Pd
Tj
Tstg
Limits
500
500
500
7
150
500
200
625
150
-55~+150
Unit
V
mA
mW
°C
°C
Characteristics (Ta=25°C)
Symbol
*BVCBO
*BVCEO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
500
500
500
7
-
-
-
-
-
-
-
120
120
120
30
50
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
110
1500
Max.
-
-
-
-
100
100
100
90
150
0.9
0.9
-
300
-
-
-
8
-
-
Unit
V
nA
mV
V
-
-
-
-
MHz
pF
ns
Test Conditions
IC=50μA
IC=10mA
IC=50μA
IE=50μA
VCB=500V
VCE=500V
VEB=5V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
IC=50mA, IB=5mA
VCE=10V, IC=50mA
VCE=10V, IC=1mA
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
VCE=100V, IC=50mA, IB1=5mA, IB 2=
-10mA
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
BTNA45A3
CYStek Product Specification


Features CYStech Electronics Corp. NPN High Volt age Planar Transistor BTNA45A3 BVCEO I C VCESAT Spec. No. : C241A3 Issued Dat e : 2011.06.10 Revised Date : 2013.11.2 2 Page No. : 1/7 500V 150mA 150mV (max) Description • High breakdown voltag e. (BVCEO=500V) • Low collector-emitt er saturation voltage VCESAT. • High collector current capability IC and ICM . • High collector current gain HFE a t high collector current IC. • Low co llector output capacitance. (Typ. 5pF a t VCB =20V) • Pb-free lead plating an d halogen-free package. Symbol BTNA45A 3 Outline TO-92 B:Base C:Collect or E:Emitter E BC Ordering Informat ion Device BTNA45A3-0-TB-G BTNA45A3-0- BK-G Package TO-92 (Pb-free lead plati ng and halogen-free package) TO-92 (Pb- free lead plating and halogen-free pack age) Shipping 2000 pcs / Tape & Box 10 00 pcs/ bag, 10 bags/box, 10boxes/carto n Environment friendly grade : S for R oHS compliant products, G for RoHS comp liant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000.
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