BTNA45N3 Transistor Datasheet

BTNA45N3 Datasheet, PDF, Equivalent


Part Number

BTNA45N3

Description

NPN High Voltage Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTNA45N3 Datasheet


BTNA45N3
CYStech Electronics Corp.
NPN High Voltage Planar Transistor
BTNA45N3
BVCEO
IC
VCESAT
Spec. No. : C241N3
Issued Date : 2011.06.10
Revised Date : 2017.05.15
Page No. : 1/7
500V
150mA
150mV (max)
Features
High breakdown voltage. (BVCEO=500V)
Low collector-emitter saturation voltage VCESAT.
High collector current capability IC and ICM.
High collector current gain HFE at high collector current IC.
Low collector output capacitance. (Typ. 5pF at VCB =20V)
Pb-free lead plating and halogen-free package.
Symbol
BTNA45N3
Outline
SOT-23
C
BE
Ordering Information
Device
BTNA45N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTNA45N3
CYStek Product Specification 1

BTNA45N3
CYStech Electronics Corp.
Spec. No. : C241N3
Issued Date : 2011.06.10
Revised Date : 2017.05.15
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current , single pulse, pulse width tp<1ms
Peak Base Current, single pulse, pulse width tp<1ms
Power Dissipation (Note )
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
Pd
Tj
Tstg
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limits
500
500
500
7
150
500
200
300
150
-55~+150
Unit
V
mA
mW
°C
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient, in free air (Note)
Thermal Resistance, Junction-to-Solder point
Symbol
Rth,j-a
Rth,j-sp
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limit
417
70
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
*BVCBO
*BVCES
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
toff
Min.
500
500
500
7
-
-
-
-
-
-
-
120
120
120
30
50
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
110
1500
BTNA45N3
Max.
-
-
-
-
100
100
100
90
150
0.9
0.9
-
300
-
-
-
8
-
-
Unit
V
nA
mV
V
-
-
-
-
MHz
pF
ns
Test Conditions
IC=50μA
IC=50μA
IC=10mA
IE=50μA
VCB=500V
VCE=500V
VEB=5V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
IC=50mA, IB=5mA
VCE=10V, IC=50mA
VCE=10V, IC=1mA
VCE=10V, IC=30mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
VCE=100V, IC=50mA, IB1=5mA, IB 2=
-10mA
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
CYStek Product Specification 2


Features CYStech Electronics Corp. NPN High Volt age Planar Transistor BTNA45N3 BVCEO I C VCESAT Spec. No. : C241N3 Issued Dat e : 2011.06.10 Revised Date : 2017.05.1 5 Page No. : 1/7 500V 150mA 150mV (max) Features • High breakdown voltage. (BVCEO=500V) • Low collector-emitter saturation voltage VCESAT. • High col lector current capability IC and ICM. High collector current gain HFE at h igh collector current IC. • Low colle ctor output capacitance. (Typ. 5pF at V CB =20V) • Pb-free lead plating and h alogen-free package. Symbol BTNA45N3 Outline SOT-23 C BE Ordering Informat ion Device BTNA45N3-0-T1-G Package SO T-23 (Pb-free lead plating and halogen- free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoH S compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel , 7” reel Product rank, zero for no r ank products Product name BTNA45N3 CY Stek Product Specification 1 CYStech Electronics Corp. Spec. No. : C241N3 I.
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