LMG3411R050 Stage Datasheet

LMG3411R050 Datasheet, PDF, Equivalent


Part Number

LMG3411R050

Description

Integrated GaN Fet Power Stage

Manufacture

etcTI

Total Page 30 Pages
Datasheet
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LMG3411R050
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LMG3410R050, LMG3411R050
SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020
LMG341xR050 600-V 50-mIntegrated GaN Fet Power Stage With Overcurrent Protection
1 Features
1 TI GaN FET reliability qualified with in-application
hard-switching accelerated stress profiles
• Enables high density power conversion designs
– Superior system performance over cascode or
stand-alone GaN FETs
– Low inductance 8 mm x 8 mm QFN package
for ease of design, and layout
– Adjustable drive strength for switching
performance and EMI control
– Digital fault status output signal
– Only +12 V unregulated supply needed
• Integrated gate driver
– Zero common source inductance
– 20 ns Propagation delay for MHz operation
– Trimmed gate bias voltage to compensate for
threshold variations ensures reliable switching
– 25 to 100V/ns User adjustable slew rate
• Robust protection
– Requires no external protection components
– Overcurrent protection with less than 100 ns
response
– Greater than 150 V/ns Slew rate immunity
– Transient overvoltage immunity
– Overtemperature protection
– Under voltage lock out (UVLO) Protection on
all supply rails
• Robust protection
LMG3410R050: Latched overcurrent
protection
LMG3411R050: Cycle-by-cycle overcurrent
protection
2 Applications
• High density industrial and consumer power
supplies
• Multi-level converters
• Solar inverters
• Industrial motor drives
• Uninterruptable power supplies
• High voltage battery chargers
3 Description
The LMG341xR050 GaN power stage with integrated
driver and protection enables designers to achieve
new levels of power density and efficiency in power
electronics systems. The LMG341x’s inherent
advantages over silicon MOSFETs include ultra-low
input and output capacitance, zero reverse recovery
to reduce switching losses by as much as 80%, and
low switch node ringing to reduce EMI. These
advantages enable dense and efficient topologies like
the totem-pole PFC.
The LMG341xR050 provides a smart alternative to
traditional cascode GaN and standalone GaN FETs
by integrating a unique set of features to simplify
design, maximize reliability and optimize the
performance of any power supply. Integrated gate
drive enables 100 V/ns switching with near zero Vds
ringing, less than 100 ns current limiting response
self-protects against unintended shoot-through
events, overtemperature shutdown prevents thermal
runaway, and system interface signals provide self-
monitoring capability.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMG341xR050
QFN (32)
8.00 mm × 8.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Block Diagram
D
Slew Rate
RDRV
Direct-Drive
S
600 V
GaN
Switching Performance at >100 V/ns
IN
VDD VNEG
LDO, OCP, OTP, Current
5 V BB UVLO
FAULT
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

LMG3411R050
LMG3410R050, LMG3411R050
SNOSD81B – SEPTEMBER 2018 – REVISED JANUARY 2020
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Typical Characteristics .............................................. 7
7 Parameter Measurement Information .................. 9
7.1 Switching Parameters ............................................... 9
8 Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Safe Operation Area (SOA) .................................... 17
9 Application and Implementation ........................ 17
9.1 Application Information............................................ 18
9.2 Typical Application ................................................. 19
9.3 Do's and Don'ts ...................................................... 21
10 Power Supply Recommendations ..................... 23
10.1 Using an Isolated Power Supply ........................... 23
10.2 Using a Bootstrap Diode ...................................... 23
11 Layout................................................................... 25
11.1 Layout Guidelines ................................................. 25
11.2 Layout Example .................................................... 26
12 Device and Documentation Support ................. 28
12.1 Device Support...................................................... 28
12.2 Documentation Support ....................................... 28
12.3 Receiving Notification of Documentation Updates 28
12.4 Community Resources.......................................... 28
12.5 Trademarks ........................................................... 28
12.6 Electrostatic Discharge Caution ............................ 28
12.7 Glossary ................................................................ 28
13 Mechanical, Packaging, and Orderable
Information ........................................................... 28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (March 2019) to Revision B
Page
• Production Data Release of Data sheet ................................................................................................................................ 1
Changes from Original (September 2018) to Revision A
Page
• Added LMG3411R050 part..................................................................................................................................................... 1
2 Submit Documentation Feedback
Copyright © 2018–2020, Texas Instruments Incorporated
Product Folder Links: LMG3410R050 LMG3411R050


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity LMG3410R050, LMG3411R050 SNOSD8 1B – SEPTEMBER 2018 – REVISED JANUA RY 2020 LMG341xR050 600-V 50-mΩ Integ rated GaN Fet Power Stage With Overcurr ent Protection 1 Features •1 TI GaN FET reliability qualified with in-appli cation hard-switching accelerated stres s profiles • Enables high density pow er conversion designs – Superior syst em performance over cascode or stand-al one GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, an d layout – Adjustable drive strength for switching performance and EMI contr ol – Digital fault status output sign al – Only +12 V unregulated supply ne eded • Integrated gate driver – Zer o common source inductance – 20 ns Pr opagation delay for MHz operation – T rimmed gate bias voltage to compensate for threshold variations ensures reliab le switching – 25 to 100V/ns User adj ustable slew rate • Robust protection – Requires no external protection components – Overcurr.
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