LMG3411R070 GaN Datasheet

LMG3411R070 Datasheet, PDF, Equivalent


Part Number

LMG3411R070

Description

GaN

Manufacture

etcTI

Total Page 30 Pages
Datasheet
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LMG3411R070
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LMG3410R070, LMG3411R070
SNOSD10E – APRIL 2016 – REVISED OCTOBER 2018
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection
1 Features
1 TI GaN Process Qualified Through Accelerated
Reliability In-application Hard-switching Mission
Profiles
• Enables High Density Power Conversion Designs
– Superior System Performance Over Cascode
or Stand-alone GaN FETs
– Low Inductance 8mm x 8mm QFN Package for
Ease of Design, and Layout
– Adjustable Drive Strength for Switching
Performance and EMI Control
– Digital Fault Status Output Signal
– Only +12 V Unregulated Supply Needed
• Integrated Gate Driver
– Zero Common Source Inductance
– 20 ns Propagation Delay for MHz Operation
– Process-tuned Gate Bias Voltage for Reliability
– 25 to 100V/ns User Adjustable Slew Rate
• Robust Protection
– Requires No External Protection Components
– Over-current Protection with <100ns Response
– >150V/ns Slew Rate Immunity
– Transient Overvoltage Immunity
– Overtemperature Protection
– UVLO Protection on All Supply Rails
Device Options:
LMG3410R070: Latched Overcurrent
Protection
LMG3411R070: Cycle-by-cycle Overcurrent
Protection
2 Applications
• High Density Industrial and Consumer Power
Supplies
• Multi-level Converters
• Solar Inverters
• Industrial Motor Drives
• Uninterruptable Power Supplies
• High Voltage Battery Chargers
3 Description
The LMG341xR070 GaN power stage with integrated
driver and protection enables designers to achieve
new levels of power density and efficiency in power
electronics systems. The LMG341x’s inherent
advantages over silicon MOSFETs include ultra-low
input and output capacitance, zero reverse recovery
to reduce switching losses by as much as 80%, and
low switch node ringing to reduce EMI. These
advantages enable dense and efficient topologies like
the totem-pole PFC.
The LMG341xR070 provides a smart alternative to
traditional cascode GaN and standalone GaN FETs
by integrating a unique set of features to simplify
design, maximize reliability and optimize the
performance of any power supply. Integrated gate
drive enables 100V/ns switching with near zero Vds
ringing, <100 ns current limiting self-protects against
unintended shoot-through events, Overtemperature
shutdown prevents thermal runaway, and system
interface signals provide self-monitoring capability.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LMG341xR070
QFN (32)
8.00 mm × 8.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Block Diagram
D
Slew Rate
RDRV
Direct-Drive
S
600 V
GaN
Switching Performance at >100 V/ns
IN
VDD VNEG
LDO, OCP, OTP, Current
5 V BB UVLO
FAULT
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

LMG3411R070
LMG3410R070, LMG3411R070
SNOSD10E – APRIL 2016 – REVISED OCTOBER 2018
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information .................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Switching Characteristics .......................................... 6
6.7 Typical Characteristics .............................................. 7
7 Parameter Measurement Information .................. 9
7.1 Switching Parameters ............................................... 9
8 Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 15
9 Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application ................................................. 16
9.3 Paralleling GaN Devices ......................................... 19
9.4 Do's and Don'ts ...................................................... 19
10 Power Supply Recommendations ..................... 20
10.1 Using an Isolated Power Supply ........................... 20
10.2 Using a Bootstrap Diode ...................................... 20
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 23
12 Device and Documentation Support ................. 25
12.1 Device Support...................................................... 25
12.2 Documentation Support ....................................... 25
12.3 Receiving Notification of Documentation Updates 25
12.4 Community Resources.......................................... 25
12.5 Trademarks ........................................................... 25
12.6 Electrostatic Discharge Caution ............................ 25
12.7 Glossary ................................................................ 25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
Changes from Revision D (August 2018) to Revision E
Page
• Added LMG3411R070 to the LMG3410R070 datasheet ...................................................................................................... 1
• Added additional information in the overcurrent protection section...................................................................................... 13
Changes from Revision C (November 2017) to Revision D
Page
• Changed data sheet status from: Advanced Information to: Production Data ...................................................................... 1
• Changed generic part number from: LMG3S10 to: LMG3410R070....................................................................................... 1
Changes from Revision B (March 2017) to Revision C
Page
• Changed front page ............................................................................................................................................................... 1
Changes from Revision A (June 2016) to Revision B
Page
• Changed Gan Technology Preview to Advanced Information ............................................................................................... 1
Changes from Original (April 2016) to Revision A
Page
• Clarified part features list on front page ................................................................................................................................ 1
• Clarified definition of turn-on and turn-off energy ................................................................................................................ 11
• Corrected wording in Do's and Don'ts section ..................................................................................................................... 19
• Removed non-suitable isolated supply recommendation ..................................................................................................... 20
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Product Folder Links: LMG3410R070 LMG3411R070


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity LMG3410R070, LMG3411R070 SNOSD1 0E – APRIL 2016 – REVISED OCTOBER 2 018 LMG341xR070 600-V 70-mΩ GaN with I ntegrated Driver and Protection 1 Feat ures •1 TI GaN Process Qualified Thro ugh Accelerated Reliability In-applicat ion Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout – Adj ustable Drive Strength for Switching Pe rformance and EMI Control – Digital F ault Status Output Signal – Only +12 V Unregulated Supply Needed • Integra ted Gate Driver – Zero Common Source Inductance – 20 ns Propagation Delay for MHz Operation – Process-tuned Gat e Bias Voltage for Reliability – 25 t o 100V/ns User Adjustable Slew Rate • Robust Protection – Requires No Exte rnal Protection Components – Over-current Protection with <100ns Response – >150V/ns Slew Rate I.
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