Hermetic Infrared Diode OP130 Series
Features:
• TO-46 hermetically sealed package • Focused and non-focused optical light pattern • Enhanced temperature range • Mechanically and spectrally matched to other OPTEK devices • Choice of power ranges • Choice of narrow or wide irradiance pattern
“W”
Description: Each OP130 series device is a 935 nm gallium arsenide (GaAs) infrared LED mounted in a hermetically sealed TO-46 package that provides an enhanced temperature range with a variety of power ranges The TO-46 housing also offers high power dissipation and superior protection for hostile environments.
Each OP130 device has a narrow beam with an inclusive angle at half power points of 18°. Each OP130W series device has a broad irradiance pattern of 50° at half power points, providing relatively even illumination over a large area. These devices are designed to efficiently operate with OP800, OP593, OP598 and OP599 phototransistors or the OP830 photodarlington.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information.
Applications:
• Non-contact reflective object sensor • Assembly line automation • Machine automation • Machine safety • End of travel sensor
Part LED Peak Number Wavelength
OP130 OP131 OP132 OP133 OP130W OP133W
935 nm
Ordering Information
Output Power (mW/cm2)
Min / Max
Lens Total Beam Type Angle
1.0 / NA
3.0 / NA 4.0 / NA
Dome 18°
5.0 / NA
1.0 / NA 5.0 / NA
Flat 50°
Lead Length (Min)
0.50"
RoHS
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc
TT Electronics | OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
[email protected] | www.ttelectronics.com
Issue D 04/2019 Page 1
Hermetic Infrared Diode OP130 Series
Electrical Specifications
OP130, OP131, OP132, OP133
Anode Cathode
DIMENSIONS ARE IN:
[MILLIMETERS] INCHES
Anode
OP130W and OP133W
Cathode
DIMENSIONS ARE IN:
[MILLIMETERS] INCHES
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT electronics plc
Pin # 1 2
LED Anode Cathode
TT Electronics | OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
[email protected] | www.ttelectronics.com
Issue D 04/2019 Page 2
Hermetic Infrared Diode OP130 Series
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range Operating Temperature Range Reverse Voltage Continuous Forward Current Peak Forward Current (2 us pulse width, 0.1% duty cycle) Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] Power Dissipation
-65o C to +150o C -65o C to +125o C
2.0 V 100 mA
10.0 A 260° C(1)(2) 200 mW(3)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
Radiant Power Output OP130, OP130W
PO OP131 OP132 OP133, OP133W
1.0 3.0 4.0 5.0 -
VF Forward Voltage
--
IR Reverse Current λP Wavelength at Peak Emission
-- 935
β Spectral Bandwidth between Half Power Points
- 50
MAX
1.75 100 -
-
UNITS
TEST CONDITIONS
mW IF = 100 mA(3 )
V IF = 100 mA (3) µA VR= 2.0 V nm IF = 10 mA nm IF = 10 mA
Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 2.0 mW/° C above 25° C. 3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA.
Electrical Characteristics (TA = 25° C unless otherwise noted—for reference only)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
∆λP /∆T Spectral Shift with Temperature
- +0.30 - nm/°C
Emission Angle at Half Power Points θHP OP130 series
OP130W series
-
18 50
-
Degree
tr Output Rise Time
- 1000 -
ns
tf Output Fall Time
- 500 -
ns
TEST CONDITIONS IF = Constant
I F = 100 mA
IF(PK)=100 mA, PW=10 µs, and D.C.=10.0%
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
© TT electronics plc
TT Electronics | OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
[email protected] | www.ttelectronics.com
Issue D 04/2019 Page 3
Hermetic Infrared Diode OP130 Series
Typical Forward Voltage (V)
Performance
OP130 Series (including “W” devices)
Forward Voltage vs Forward Current vs Temperature
1.8.