OP124 Diode Datasheet

OP124 Datasheet, PDF, Equivalent


Part Number

OP124

Description

Hermetic Infrared Emitting Diode

Manufacture

TT

Total Page 4 Pages
Datasheet
Download OP124 Datasheet


OP124
Hermetic Infrared Emitting
Diode
OP123, OP124, OP223, OP224
Features:
Hermetically sealed package
Mechanically and spectrally matched to other OPTEK devices
Designed for direct mount to PCBoard
Description:
Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emi ng diode (GaAs),
mounted in a miniature herme cally sealed “pill” package with an enhanced temperature range and a high power output.
These devices are designed for direct moun ng to PCBoards.
Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared emi ng diode (GaAIAs), mounted in a
herme cally sealed “pill” package with an enhanced temperature range and a narrow irradiance pa ern that provides high
on-axis intensity for excellent coupling eciency. These devices oer signicantly higher power output than GaAs at
equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size
permits high device density moun ng.
All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices.
Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data, and to
ApplicaƟon BulleƟn 202 for pill-type soldering to PCBoard.
Ordering InformaƟon
Applications:
Part LED Peak Total Beam
Number Wavelength Angle
Non-contact reflective object sensor
Assembly line automation
Machine automation
Machine safety
OP123
OP124
OP223
OP224
935 mm
890 mm
24°
End of travel sensor
Door sensor
1
2
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
Pin #
1
2
LED
Anode
Cathode
Sensor
Collector
Emitter
RoHS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 07/2016 Page 1

OP124
Hermetic Infrared Emitting
Diode
OP123, OP124, OP223, OP224
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
-65o C to +150o C
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (2μs pulse with 0.1% duty cycle)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-65o C to +125o C
2.0 V
100 mA
1.0 A
260° C(1)(2)
150 mW(3)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
E (3)
E (APT)
Apertured Radiant Incidence
OP123
OP124
OP223
OP224
Forward Voltage
VF OP123
OP124
0.40 -
1.00 -
1.00 -
3.50 -
-
- mW/cm2 IF = 50 mA(4)
-
-
-
-
- 1.50
- 1.80
V IF = 50 mA
IR Reverse Current
- - 100 μA VR= 2.0 V
Wavelength at Peak Emission
λP OP123, OP124
OP223, OP224
- 935 -
- 890 -
Spectral Bandwidth between Half Power Points
B OP123, OP124
- 50 -
OP223, OP224
- 80 -
ΔλP /ΔT
Spectral Shift with Temperature
OP123, OP124
OP223, OP224
- +0.30 -
- +0.18 -
nm
IF = 50 mA
IF = 10 mA
nm
IF = 50 mA
IF = 10 mA
nm/°C IF = Constant
θHP Emission Angle at Half Power Points
- 24 - Degree IF = 50 mA
Output Rise Time
tr OP123, OP124
OP223, OP224
- 1000 -
- 500 -
IF(PK)=100 mA, PW=10 μs, and
ns D.C.=10.0%
Output Fall Time
tf OP123, OP124
OP223, OP224
- 500 -
- 250 -
IF(PK)=100 mA, PW=10 μs, and
ns D.C.=10.0%
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP123, OP124, OP223 and OP224, EE(APT) is a measurement using a 0.031” (0.787 mm) diameter apertured sensor placed 0.50” (12.7 mm)
from the measuring surface. EE(APT) is not necessarily uniform within the measured area.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
© TT electronics plc
Issue B 07/2016 Page 2


Features Hermetic Infrared Emitting Diode OP123, OP124, OP223, OP224 Features: • Herme tically sealed package • Mechanically and spectrally matched to other OPTEK devices • Designed for direct mount t o PCBoard Description: Each OP123 and OP124 device is a 935 nanometer (nm) hi gh intensity gallium arsenide infrared emi ng diode (GaAs), mounted in a minia ture herme cally sealed “pill” pack age with an enhanced temperature range and a high power output. These devices are designed for direct moun ng to PCBo ards. Each OP223 and OP224 device is a n 890 nm gallium aluminum arsenide infr ared emi ng diode (GaAIAs), mounted in a herme cally sealed “pill” package with an enhanced temperature range and a narrow irradiance pa ern that provid es high on-axis intensity for excellent coupling efficiency. These devices o er significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched t o silicon’s peak response. Their small package size permits high device density mou.
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