SP3420 Array Datasheet

SP3420 Datasheet, PDF, Equivalent


Part Number

SP3420

Description

6A Diode Array

Manufacture

Littelfuse

Total Page 5 Pages
Datasheet
Download SP3420 Datasheet


SP3420
TVS Diode Arrays (SPA®®Diodes)
LLoigwhCtnaipnagciStaunrcgeeEPSDroPteroctteicotnio-nS-PS3P338442N0-U0T4UGTG
SP3420, 0.32pF, 6A Diode Array
RoHS Pb GREEN
12
Description
The SP3420 includes four channel ultra low capacitance
and high-level ESD protection diodes to protect high-speed
data rate such as USB 3.1, DisplayPort, Thunderbolt, and
e-SATA. The typical capacitance of 0.32pF helps ensure
signal integrity and this robust device can safely absorb
repetitive ESD strikes at the maximum level specified in
the IEC 61000-4-2 international standard (Level 4, ±8kV
contact discharge) without performance degradation safely
dissipate 6A of 8/20μs surge current (IEC 61000-4-5 2nd
edition).
43
Pinout
1G
3
1 2 3.G 4 5
3
10 9 8.G
12
76
4
12
Bottom View
5
3
2 Features
2G
4
• ESD, IEC 61000-4-2,
±12kV contact, ±15kV air
• EFT, IEC 61000-4-4, 40A
(5/510ns)
• Lightning, IEC 61000-
4-5 2nd edition, 6A
6L(toPw=8c/2ap0aμcsi)tance of
0.32pF@1.5V (TYP)
• Low leakage current of
0.02μA (TYP) at 3.3V
• Low operating and
clamping voltage
• AEC-Q101 qualified
• Halogen free, Lead free
and RoHS compliant
• Moisture Sensitivity Level
(MSL -1)
3
Functional Block 0D40ia2 DgFrNaamrray
12 45
G, 3, 8
1004 DFN array
G
0802 DFN array
Applications
• Ultra-high speed data
lines
1 2 3 4 5 6 • USB 3.1, 3.0, 2.0
• DisplayPort(TM)
• Thunderbolt (Light Peak)
G • V-by-One®
1103 DFN array
• LVDS interfaces
• Consumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/16/19

SP3420
TVS Diode Arrays (SPA®®Diodes)
LLoigwhCtnaipnagciStaunrcgeeEPSDroPteroctteicotnio-nS-PS3P338442N0-U0T4UGTG
Absolute Maximum Ratings
Symbol
IPP
TOP
TSTOR
Parameter
Peak Current (tp=8/20μs)
Operating Temperature
Storage Temperature
Value
6
-40 to 125
-55 to 150
Units
A
°C
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Min Typ
Reverse Standoff Voltage
VRWM
IR = 1μA
Breakdown Voltage
VBR
IR = 1mA
6.5 8.5
Reverse Leakage Current
ILEAK
VR=3.3V
0.02
Holding Voltage
VHOLD
I/O to GND
1.7
Clamp Voltage1
VC
IPP=1A, tp=8/20μs
IPP=6A, tp=8/20μs
2.7
4
Dynamic Resistance2
RDYN
TLP, tp=100ns
0.3
ESD Withstand Voltage1,3
VESD
IEC 61000-4-2 (Contact Discharge)
IEC 61000-4-2 (Air Discharge)
±12
±15
Diode Capacitance1
CI/O-GND
Reverse Bias=1.5V, f=1MHz
0.32
Notes:
1Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=90ns
3 Device stressed with ten non-repetitive ESD pulses.
Max
3.3
0.1
3.5
6
0.35
Units
V
V
μA
V
V
V
Ω
kV
kV
pF
8/20μs Pulse Waveform
Capacitance vs. Reverse Bias
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0 10.0 15.0 20.0 25.0
Time (μs)
30.0
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
Bias Voltage (V)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 07/16/19


Features TVS Diode Arrays (SPA®®Diodes) LLoigwh CtnaipnagciStaunrcgeeEPSDroPteroctteico tnio-nS-PS3P338442N0-U0T4UGTG SP3420, 0 .32pF, 6A Diode Array RoHS Pb GREEN 1 2 Description The SP3420 includes four channel ultra low capacitance and high -level ESD protection diodes to protect high-speed data rate such as USB 3.1, DisplayPort, Thunderbolt, and e-SATA. T he typical capacitance of 0.32pF helps ensure signal integrity and this robust device can safely absorb repetitive ES D strikes at the maximum level specifie d in the IEC 61000-4-2 international st andard (Level 4, ±8kV contact discharg e) without performance degradation safe ly dissipate 6A of 8/20μs surge curren t (IEC 61000-4-5 2nd edition). 43 Pino ut 1G 3 1 2 3.G 4 5 3 10 9 8.G 12 76 4 12 Bottom View 5 3 2 Features 2G 4 • ESD, IEC 61000-4-2, ±12kV c ontact, ±15kV air • EFT, IEC 61000-4 -4, 40A (5/510ns) • Lightning, IEC 61 0004-5 2nd edition, 6A •6L(toPw=8c/2a p0aμcsi)tance of 0.32pF@1.5V (TYP) • Low leakage current of 0.02μA (TYP) at 3.
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