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VESD05A5-06G to VESD26A5-06G
Vishay Semiconductors
Five-Line ESD Protection Diode Array in SOT-363
654
123
22961
22960
MARKING (example only)
WW VY
ABC
22962
Bar = cathode marking X = date code Y = type code (see table below)
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
FEATURES
• Compact SOT-363 package
• 5-line unidirectional ESD-protection
• Working range 5V to 26 V
• ESD immunity acc. IEC 61000-4-2 ±20kV to ± 30 kV contact discharge ±20kV to ± 30 kV air discharge
• AEC-Q101 qualified available
• Lead plating: Sn (e3)
- soldering can be checked by standard vision inspection
- (AOI = automated optical inspection)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART NUMBER AEC-Q101 (EXAMPLE) QUALIFIED
RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS
TIN PLATED
3K PER 7" REEL (8 mm TAPE)
GREEN
MOQ = 15K/BOX
VESD05A5-06G
-
G
3 -08
VESD05A5-06G
H
G
3 -08
ORDERING CODE (EXAMPLE)
VESD05A5-06G-G3-08 VESD05A5-06GHG3-08
PACKAGE DATA
DEVICE NAME
PACKAGE NAME
VESD05A5-06G
VESD12A5-06G VESD16A5-06G
SOT-363
VESD26A5-06G
TYPE CODE
D05
D12
D16
D26
WEIGHT 7.22 mg
MOLDING COMPOUND FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY LEVEL
MSL level 1 (according J-STD-020)
SOLDERING CONDITIONS
Peak temperature max. 260°C
Rev. 1.0, 14-Feb-2019
1 Document Number: 86131
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VESD05A5-06G to VESD26A5-06G
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS VESD05A5-06G
PARAMETER
TEST CONDITIONS
Peak pulse current
Acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
Acc. IEC 61000-4-5, 8/20 μs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL IPPM PPP
VESD
TJ Tstg
VALUE 8.7 100 30 30
-55 to +150 -55 to +150
UNIT A W kV kV °C °C
ABSOLUTE MAXIMUM RATINGS VESD12A5-06G
PARAMETER
TEST CONDITIONS
Peak pulse current
Acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
Acc. IEC 61000-4-5, 8/20 μs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL IPPM PPP
VESD
TJ Tstg
VALUE 4.4 100 30 30
-55 to +150 -55 to +150
UNIT A W kV kV °C °C
ABSOLUTE MAXIMUM RATINGS VESD16A5-06G
PARAMETER
TEST CONDITIONS
Peak pulse current
Acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
Acc. IEC 61000-4-5, 8/20 μs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL IPPM PPP
VESD
TJ Tstg
VALUE 3.6 100 30 30
-55 to +150 -55 to +150
UNIT A W kV kV °C °C
ABSOLUTE MAXIMUM RATINGS VESD26A5-06G
PARAMETER
TEST CONDITIONS
Peak pulse current
Acc. IEC 61000-4-5, 8/20 μs/single shot
Peak pulse power
Acc. IEC 61000-4-5, 8/20 μs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL IPPM PPP
VESD
TJ Tstg
VALUE 2.1 100 20 20
-55 to +150 -55 to +150
UNIT A W kV kV °C °C
Rev. 1.0, 14-Feb-2019
2 Document Number: 86131
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VESD05A5-06G to VESD26A5-06G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD05A5-06G (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse stand off voltage
Max. reverse working voltage
Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage
Forward clamping voltage
Dynamic resistance Capacitance
at IR = 1 μA at VR = 5 V at IR = 1 mA at IPP = IPPM = 8.7 A, tp = 8/20 μs at IPP = 1 A, tp = 300 μs at IPP = IPPM = 8.7 A, tp = 8/20 μs tp = 100 ns (TLP; pin 2-1) at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel VRWM
VR IR VBR VC VF VF rdyn CD
MIN. 5 -
6.85 -
0.9 53
ELECTRICAL CHARACTERISTICS VESD12A5-06G (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse stand off voltage
Max. reverse working voltage
Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage
Forward clamping voltage
Dynamic resist.