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VESD26A5-06G Dataheets PDF



Part Number VESD26A5-06G
Manufacturers Vishay
Logo Vishay
Description Five-Line ESD Protection Diode Array
Datasheet VESD26A5-06G DatasheetVESD26A5-06G Datasheet (PDF)

www.vishay.com VESD05A5-06G to VESD26A5-06G Vishay Semiconductors Five-Line ESD Protection Diode Array in SOT-363 654 123 22961 22960 MARKING (example only) WW VY ABC 22962 Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Compact SOT-363 package • 5-line unidirectional ESD-protection • Working range 5V to 26 V • ESD immunity acc. IEC 61000-4-2 ±20kV to ± 30 kV contact discharge ±20kV to ± 30 kV air dischar.

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www.vishay.com VESD05A5-06G to VESD26A5-06G Vishay Semiconductors Five-Line ESD Protection Diode Array in SOT-363 654 123 22961 22960 MARKING (example only) WW VY ABC 22962 Bar = cathode marking X = date code Y = type code (see table below) DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Compact SOT-363 package • 5-line unidirectional ESD-protection • Working range 5V to 26 V • ESD immunity acc. IEC 61000-4-2 ±20kV to ± 30 kV contact discharge ±20kV to ± 30 kV air discharge • AEC-Q101 qualified available • Lead plating: Sn (e3) - soldering can be checked by standard vision inspection - (AOI = automated optical inspection) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912            ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART NUMBER AEC-Q101 (EXAMPLE) QUALIFIED RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS TIN PLATED 3K PER 7" REEL (8 mm TAPE) GREEN MOQ = 15K/BOX VESD05A5-06G - G 3 -08 VESD05A5-06G H G 3 -08 ORDERING CODE (EXAMPLE) VESD05A5-06G-G3-08 VESD05A5-06GHG3-08 PACKAGE DATA DEVICE NAME PACKAGE NAME VESD05A5-06G VESD12A5-06G VESD16A5-06G SOT-363 VESD26A5-06G TYPE CODE D05 D12 D16 D26 WEIGHT 7.22 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS Peak temperature max. 260°C Rev. 1.0, 14-Feb-2019 1 Document Number: 86131 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VESD05A5-06G to VESD26A5-06G Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VESD05A5-06G PARAMETER TEST CONDITIONS Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Operating temperature Junction temperature Storage temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 8.7 100 30 30 -55 to +150 -55 to +150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD12A5-06G PARAMETER TEST CONDITIONS Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Operating temperature Junction temperature Storage temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 4.4 100 30 30 -55 to +150 -55 to +150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD16A5-06G PARAMETER TEST CONDITIONS Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Operating temperature Junction temperature Storage temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 3.6 100 30 30 -55 to +150 -55 to +150 UNIT A W kV kV °C °C ABSOLUTE MAXIMUM RATINGS VESD26A5-06G PARAMETER TEST CONDITIONS Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Operating temperature Junction temperature Storage temperature SYMBOL IPPM PPP VESD TJ Tstg VALUE 2.1 100 20 20 -55 to +150 -55 to +150 UNIT A W kV kV °C °C Rev. 1.0, 14-Feb-2019 2 Document Number: 86131 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VESD05A5-06G to VESD26A5-06G Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD05A5-06G (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS Protection paths Number of lines which can be protected Reverse stand off voltage Max. reverse working voltage Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance at IR = 1 μA at VR = 5 V at IR = 1 mA at IPP = IPPM = 8.7 A, tp = 8/20 μs at IPP = 1 A, tp = 300 μs at IPP = IPPM = 8.7 A, tp = 8/20 μs tp = 100 ns (TLP; pin 2-1) at VR = 0 V; f = 1 MHz SYMBOL Nchannel VRWM VR IR VBR VC VF VF rdyn CD MIN. 5 - 6.85 - 0.9 53 ELECTRICAL CHARACTERISTICS VESD12A5-06G (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS/REMARKS Protection paths Number of lines which can be protected Reverse stand off voltage Max. reverse working voltage Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resist.


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